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DBF20E

Description
Bridge Rectifier Diode, 1 Phase, 2A, 400V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size59KB,2 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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DBF20E Overview

Bridge Rectifier Diode, 1 Phase, 2A, 400V V(RRM), Silicon,

DBF20E Parametric

Parameter NameAttribute value
MakerSANYO
package instructionR-PSIP-T4
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PSIP-T4
Maximum non-repetitive peak forward current60 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

DBF20E Related Products

DBF20E DBF20B
Description Bridge Rectifier Diode, 1 Phase, 2A, 400V V(RRM), Silicon, Bridge Rectifier Diode, 1 Phase, 2A, 100V V(RRM), Silicon,
Maker SANYO SANYO
package instruction R-PSIP-T4 R-PSIP-T4
Reach Compliance Code unknown unknown
Other features HIGH RELIABILITY HIGH RELIABILITY
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V
JESD-30 code R-PSIP-T4 R-PSIP-T4
Maximum non-repetitive peak forward current 60 A 60 A
Number of components 4 4
Phase 1 1
Number of terminals 4 4
Maximum operating temperature 150 °C 150 °C
Maximum output current 2 A 2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 400 V 100 V
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
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