DRA8G datasheet, PDF - EEWORLD Datasheet

DRA8G: DescriptionSILICON CONTROLLED RECTIFIER,600V V(DRM),8A I(T),TO-220; CategoryAnalog mixed-signal IC Trigger device; File Size102KB，3 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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DRA8G Overview

SILICON CONTROLLED RECTIFIER,600V V(DRM),8A I(T),TO-220

Parameter Name	Attribute value
Maker	ON Semiconductor
Reach Compliance Code	compliant
Critical rise rate of minimum off-state voltage	30 V/us
Maximum DC gate trigger current	40 mA
Maximum DC gate trigger voltage	1.5 V
Maximum holding current	60 mA
Maximum leakage current	2 mA
On-state non-repetitive peak current	120 A
Maximum on-state voltage	1.6 V
Maximum on-state current	8000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	600 V
surface mount	NO
Trigger device type	SCR

	DRA8G
Description	SILICON CONTROLLED RECTIFIER,600V V(DRM),8A I(T),TO-220
Maker	ON Semiconductor
Reach Compliance Code	compliant
Critical rise rate of minimum off-state voltage	30 V/us
Maximum DC gate trigger current	40 mA
Maximum DC gate trigger voltage	1.5 V
Maximum holding current	60 mA
Maximum leakage current	2 mA
On-state non-repetitive peak current	120 A
Maximum on-state voltage	1.6 V
Maximum on-state current	8000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	600 V
surface mount	NO
Trigger device type	SCR

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