DRD3E datasheet, PDF - EEWORLD Datasheet

DRD3E: DescriptionSILICON CONTROLLED RECTIFIER,400V V(DRM),3A I(T),TO-220; CategoryAnalog mixed-signal IC Trigger device; File Size97KB，3 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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DRD3E Overview

SILICON CONTROLLED RECTIFIER,400V V(DRM),3A I(T),TO-220

Parameter Name	Attribute value
Maker	ON Semiconductor
Reach Compliance Code	compliant
Critical rise rate of minimum off-state voltage	100 V/us
Maximum DC gate trigger current	15 mA
Maximum DC gate trigger voltage	1.5 V
Maximum leakage current	0.5 mA
On-state non-repetitive peak current	60 A
Maximum on-state voltage	1.6 V
Maximum on-state current	3000 A
Maximum operating temperature	110 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	400 V
surface mount	NO
Trigger device type	SCR

	DRD3E	DRD3B
Description	SILICON CONTROLLED RECTIFIER,400V V(DRM),3A I(T),TO-220	SILICON CONTROLLED RECTIFIER,100V V(DRM),3A I(T),TO-220
Maker	ON Semiconductor	ON Semiconductor
Reach Compliance Code	compliant	compliant
Critical rise rate of minimum off-state voltage	100 V/us	100 V/us
Maximum DC gate trigger current	15 mA	15 mA
Maximum DC gate trigger voltage	1.5 V	1.5 V
Maximum leakage current	0.5 mA	0.5 mA
On-state non-repetitive peak current	60 A	60 A
Maximum on-state voltage	1.6 V	1.6 V
Maximum on-state current	3000 A	3000 A
Maximum operating temperature	110 °C	110 °C
Minimum operating temperature	-40 °C	-40 °C
Off-state repetitive peak voltage	400 V	100 V
surface mount	NO	NO
Trigger device type	SCR	SCR

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