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2N5083

Description
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 Pin, TO-59, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size69KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

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2N5083 Overview

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 Pin, TO-59, 3 PIN

2N5083 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1439168421
package instructionPOST/STUD MOUNT, O-MUPM-X3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)10 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-59
JESD-30 codeO-MUPM-X3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON

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Index Files: 2564  2702  2365  1468  260  52  55  48  30  6 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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