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2N6789

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size355KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

2N6789 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

2N6789 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid102182617
Reach Compliance Codenot_compliant
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)3.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)20 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
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