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2N7282D1

Description
Power Field-Effect Transistor, 3A I(D), 500V, 2.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
CategoryDiscrete semiconductor    The transistor   
File Size115KB,5 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
Download Datasheet Parametric View All

2N7282D1 Overview

Power Field-Effect Transistor, 3A I(D), 500V, 2.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA

2N7282D1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-MSFM-P3
Reach Compliance Codeunknow
Other featuresRADIATION HARDENED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)3 A
Maximum drain current (ID)3 A
Maximum drain-source on-resistance2.52 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-257AA
JESD-30 codeR-MSFM-P3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
Maximum pulsed drain current (IDM)9 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
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