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DTB3B

Description
TRIAC,100V V(DRM),3A I(T)RMS,TO-202
CategoryAnalog mixed-signal IC    Trigger device   
File Size95KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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DTB3B Overview

TRIAC,100V V(DRM),3A I(T)RMS,TO-202

DTB3B Parametric

Parameter NameAttribute value
MakerON Semiconductor
package instruction,
Reach Compliance Codecompliant
Maximum DC gate trigger current30 mA
Maximum DC gate trigger voltage2 V
Maximum holding current25 mA
Maximum leakage current1 mA
Maximum on-state voltage1.5 V
Maximum operating temperature110 °C
Minimum operating temperature-40 °C
Maximum rms on-state current3 A
Off-state repetitive peak voltage100 V
surface mountNO
Trigger device typeTRIAC

DTB3B Related Products

DTB3B DTB3C DTB3G
Description TRIAC,100V V(DRM),3A I(T)RMS,TO-202 TRIAC,200V V(DRM),3A I(T)RMS,TO-202 TRIAC,600V V(DRM),3A I(T)RMS,TO-202
Maker ON Semiconductor ON Semiconductor ON Semiconductor
Reach Compliance Code compliant compliant compliant
Maximum DC gate trigger current 30 mA 30 mA 30 mA
Maximum DC gate trigger voltage 2 V 2 V 2 V
Maximum holding current 25 mA 25 mA 25 mA
Maximum leakage current 1 mA 1 mA 1 mA
Maximum on-state voltage 1.5 V 1.5 V 1.5 V
Maximum operating temperature 110 °C 110 °C 110 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Maximum rms on-state current 3 A 3 A 3 A
Off-state repetitive peak voltage 100 V 200 V 600 V
surface mount NO NO NO
Trigger device type TRIAC TRIAC TRIAC
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