DTB3G datasheet, PDF - EEWORLD Datasheet

DTB3G: DescriptionTRIAC,600V V(DRM),3A I(T)RMS,TO-202; CategoryAnalog mixed-signal IC Trigger device; File Size95KB，3 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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DTB3G Overview

TRIAC,600V V(DRM),3A I(T)RMS,TO-202

Parameter Name	Attribute value
Maker	ON Semiconductor
package instruction	,
Reach Compliance Code	compliant
Maximum DC gate trigger current	30 mA
Maximum DC gate trigger voltage	2 V
Maximum holding current	25 mA
Maximum leakage current	1 mA
Maximum on-state voltage	1.5 V
Maximum operating temperature	110 °C
Minimum operating temperature	-40 °C
Maximum rms on-state current	3 A
Off-state repetitive peak voltage	600 V
surface mount	NO
Trigger device type	TRIAC

	DTB3G	DTB3B	DTB3C
Description	TRIAC,600V V(DRM),3A I(T)RMS,TO-202	TRIAC,100V V(DRM),3A I(T)RMS,TO-202	TRIAC,200V V(DRM),3A I(T)RMS,TO-202
Maker	ON Semiconductor	ON Semiconductor	ON Semiconductor
Reach Compliance Code	compliant	compliant	compliant
Maximum DC gate trigger current	30 mA	30 mA	30 mA
Maximum DC gate trigger voltage	2 V	2 V	2 V
Maximum holding current	25 mA	25 mA	25 mA
Maximum leakage current	1 mA	1 mA	1 mA
Maximum on-state voltage	1.5 V	1.5 V	1.5 V
Maximum operating temperature	110 °C	110 °C	110 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C
Maximum rms on-state current	3 A	3 A	3 A
Off-state repetitive peak voltage	600 V	100 V	200 V
surface mount	NO	NO	NO
Trigger device type	TRIAC	TRIAC	TRIAC

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