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2N3999

Description
5A, 80V, NPN, Si, POWER TRANSISTOR, TO-111
CategoryDiscrete semiconductor    The transistor   
File Size62KB,1 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
Stay tuned Parametric

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2N3999 Overview

5A, 80V, NPN, Si, POWER TRANSISTOR, TO-111

2N3999 Parametric

Parameter NameAttribute value
package instructionPOST/STUD MOUNT, O-MUPM-D3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-111
JESD-30 codeO-MUPM-D3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)40 MHz
Base Number Matches1
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