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FMMT2907RTA

Description
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size43KB,2 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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FMMT2907RTA Overview

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon

FMMT2907RTA Parametric

Parameter NameAttribute value
MakerDiodes
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Maximum off time (toff)110 ns
Maximum opening time (tons)50 ns

FMMT2907RTA Related Products

FMMT2907RTA
Description Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
Maker Diodes
package instruction SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN code EAR99
Maximum collector current (IC) 0.6 A
Collector-emitter maximum voltage 40 V
Configuration SINGLE
Minimum DC current gain (hFE) 30
JESD-30 code R-PDSO-G3
Number of components 1
Number of terminals 3
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Polarity/channel type PNP
Certification status Not Qualified
surface mount YES
Terminal form GULL WING
Terminal location DUAL
transistor applications SWITCHING
Transistor component materials SILICON
Nominal transition frequency (fT) 200 MHz
Maximum off time (toff) 110 ns
Maximum opening time (tons) 50 ns

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