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2N2633

Description
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size290KB,4 Pages
ManufacturerSemitronics Corp.
Download Datasheet Parametric View All

2N2633 Overview

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon

2N2633 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
Number of components1
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)20 W
Certification statusNot Qualified
surface mountNO
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Base Number Matches1
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