MCC
Features
•
•
•
omponents
20736 Marilla Street Chatsworth
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DTA114TCA
Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors (see equivalent circuit)
The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input. They also have the
advantage of almost completely eliminating parasitic effects
Only the on/off conditions need to be set for operation, making
device design easy
PNP Digital Transistor
Absolute Maximum Ratings
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current-Continuous
Collector Dissipation
Junction Temperature Range
Storage Temperature Range
A
SOT-23
D
B
1.
Base
2.
Emitter
3.
Collector
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Value
-50
-50
-5
-100
200
-55~150
-55~150
Unit
V
V
V
mA
mW
℃
℃
G
K
F
3
1
2
C
E
H
J
Electrical Characteristics
Sym
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
R
1
f
T
DIMENSIONS
Parameter
Collector-Base Breakdown Voltage
(I
C
=-50uA, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=-1mA, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=-50uA, I
C
=0)
Collector Cut-off Current
(V
CB
=-50V, I
E
=0)
Emitter Cut-off Current
(V
EB
=-4V, I
C
=0)
DC Current Gain
(V
CE
=-5V, I
C
=-1mA)
Collector-Emitter Saturation Voltage
(I
C
=-10mA, I
B
=-1mA)
Input Resistor
Transition Frequency
(V
CE
=-10V, I
C
=-5mA, f=100MHz)
Min
-50
-50
-5
---
---
100
---
7
---
Typ
---
---
---
---
---
250
---
10
250
Max
---
---
---
-0.5
-0.5
600
-0.3
13
---
Unit
V
V
V
uA
uA
---
V
KΩ
MHz
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
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Revision: 1
2005/06/29
stm32/stm8
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