EEWORLDEEWORLDEEWORLD

Part Number

Search

D2211UKG4

Description
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DBC1, 8 PIN
CategoryDiscrete semiconductor    The transistor   
File Size26KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

D2211UKG4 Overview

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DBC1, 8 PIN

D2211UKG4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionDBC1, 8 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
ConfigurationSINGLE
Minimum drain-source breakdown voltage40 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDMW-F8
JESD-609 codee4
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formMICROWAVE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
TetraFET
D2211UK
ROHS COMPLIANT
METAL GATE RF SILICON FET
MECHANICAL DATA
E
B
D
8
1
7
6
3
4
2
C
A
F
5
Q
O
N
M
J
K
L
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 7.2V – 1GHz
SINGLE ENDED
I
P
H
G
FEATURES
PIN 5 Source
PIN 6 Gate
PIN 7 Gate
PIN 8 Source
DBC1 Package
PIN 1 Source
PIN 2 Drain
PIN 3 Drain
PIN 4 Source
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
mm
6.47
0.76
45°
0.76
1.14
2.67
11.73
8.43
7.92
0.20
0.64
0.30
3.25
2.11
6.35SQ
1.65
0.13
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C
rss
Tol.
.003
.003
.003
.003
.003
.005
.003
.003
.001
.001
.001
.003
.003
.003
.020
max
Tol.
0.08
0.08
0.08
0.08
0.08
0.13
0.08
0.08
0.02
0.02
0.02
0.08
0.08
0.08
0.51
max
Inches
.255
.030
45
°
.030
.045
.105
.462
.332
.312
.008
.025
.012
.128
.083
.250SQ
.065
.005
• LOW NOISE
• HIGH GAIN
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 2 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
70W
40V
±20V
16A
–65 to 150°C
200°C
Document Number 2544
Issue 1

D2211UKG4 Related Products

D2211UKG4 D2211UK
Description RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DBC1, 8 PIN RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DBC1, 8 PIN
Is it Rohs certified? conform to conform to
package instruction DBC1, 8 PIN DBC1, 8 PIN
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 40 V 40 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-CDMW-F8 R-CDMW-F8
JESD-609 code e4 e4
Number of components 1 1
Number of terminals 8 8
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 200 °C 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR
Package form MICROWAVE MICROWAVE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface GOLD GOLD
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
atmega16 and serial communication
#include iom16v.h#include macros.h#define uchar unsigned char#define uint unsigned int#define inbuf_len 4#define mclk 8000000#pragma interrupt_handler receive_char:12uint inbuf[3]={0};uint cc=0;uint i...
qing_zhi_ok Microchip MCU
DSP basic knowledge collection 3: Fixed-point operation of DSP chip
Chapter 3 Fixed-point operations of DSP chips3.1 Number calibrationIn fixed-point DSP chips, fixed-point numbers are used for numerical operations, and the operands are generally represented by intege...
呱呱 DSP and ARM Processors
GD32F350 development board adds HMI (TFT touch LCD)
GD32F350 development board adds HMI (TFT touch LCD) GD32F350 has a main frequency of up to 100M, and has 2 SPI channels, so there are also multiple 12BIT ADCs, so in my project I directly use SPI+ADC ...
蓝雨夜 GD32 MCU
Has anyone used MT8880/8888? Can you share some information with me?
Thank you very much! hope1973@qq.com...
jiuzhouliujun Embedded System
10-bit AD-tlc5615 driver
[i=s] This post was last edited by paulhyde on 2014-9-15 09:11 [/i] 10-bit AD-tlc5615 driver...
费米机器 Electronics Design Contest
1611 generates irregular waveform
What is the maximum frequency of the irregular waveform generated by 1611? Is there any example I can learn from? Thank you....
wangfei890912 Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 935  1296  674  1481  1550  19  27  14  30  32 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号