D2211UK datasheet, PDF - EEWORLD Datasheet

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D2211UK: DescriptionRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DBC1, 8 PIN; CategoryDiscrete semiconductor The transistor; File Size26KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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D2211UK Overview

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DBC1, 8 PIN

D2211UK Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	DBC1, 8 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Configuration	SINGLE
Minimum drain-source breakdown voltage	40 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-CDMW-F8
JESD-609 code	e4
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	MICROWAVE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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TetraFET

D2211UK

ROHS COMPLIANT

METAL GATE RF SILICON FET

MECHANICAL DATA

E

B

D

8

1

7

6

3

4

2

C

A

F

5

Q

O

N

M

J

K

L

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

10W – 7.2V – 1GHz

SINGLE ENDED

I

P

H

G

FEATURES

PIN 5 Source

PIN 6 Gate

PIN 7 Gate

PIN 8 Source

DBC1 Package

PIN 1 Source

PIN 2 Drain

PIN 3 Drain

PIN 4 Source

DIM

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

mm

6.47

0.76

45°

0.76

1.14

2.67

11.73

8.43

7.92

0.20

0.64

0.30

3.25

2.11

6.35SQ

1.65

0.13

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• LOW C

rss

Tol.

.003

5°

.003

.005

.003

.001

.003

.020

max

Tol.

0.08

5°

0.08

0.13

0.08

0.02

0.08

0.51

max

Inches

.255

.030

45

°

.030

.045

.105

.462

.332

.312

.008

.025

.012

.128

.083

.250SQ

.065

.005

• LOW NOISE

• HIGH GAIN

APPLICATIONS

•

HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 2 GHz

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25°C unless otherwise stated)

P

D

BV

DSS

BV

GSS

I

D(sat)

T

stg

T

j

Semelab plc.

Power Dissipation

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

Storage Temperature

Maximum Operating Junction Temperature

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Website:

http://www.semelab.co.uk

E-mail:

sales@semelab.co.uk

70W

40V

±20V

16A

–65 to 150°C

200°C

Document Number 2544

Issue 1

D2211UK Related Products

	D2211UK	D2211UKG4
Description	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DBC1, 8 PIN	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DBC1, 8 PIN
Is it Rohs certified?	conform to	conform to
package instruction	DBC1, 8 PIN	DBC1, 8 PIN
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	40 V	40 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-CDMW-F8	R-CDMW-F8
JESD-609 code	e4	e4
Number of components	1	1
Number of terminals	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	MICROWAVE	MICROWAVE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	GOLD	GOLD
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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