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DTC114TCA

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size356KB,3 Pages
ManufacturerRectron
Environmental Compliance  
Download Datasheet Parametric View All

DTC114TCA Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

DTC114TCA Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron
package instructionROHS COMPLIANT, PLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)265
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
DTC114TCA
SOT-23 DIGITAL TRANSISTOR
TRANSISTORS(NPN)
FEATURES
* Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors.
* The bias resistors consist of thin-film resistors with co-
mplete isolation to without connecting extemal input.
They also have the advantage of almost completely eli-
minating parasitic effects.
* Only the on/off conditions need to be set for operation mark-
ing device design easy.
SOT-23
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
f 0.022(0.55)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
(1)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
(2)
(1)
(1) Base
(2) Emitter
(3) Collector
O
0.079(2.00)
0.071(1.80)
(2)
(3)
0.118(3.00)
0.110(2.80)
(3)
MAXIMUM RATINGES
( @ T
A
= 25
o
C unless otherwise noted )
RATINGS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Dissipation
Junction Temperature
Junction and storage Temperature
Dimensions in inches and (millimeters)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
TJ , Tstg
VALUE
50
50
5
100
200
150
-55 to +150
UNITS
V
V
V
mA
mW
o
o
C
C
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (I
C
= 50mA, I
E
=0)
Collector-emitter breakdown voltage (I
C
= 1mA, I
B
=0)
Emitter-base breakdown voltage (I
E
= 50mA, I
C
=0)
Collector cut-off current (V
CB
= 50V, I
E
=0)
Emitter cut-off current (V
EB
= 4V, I
C
=0)
DC current gain (V
CE
= 5V, I
C
= 1mA)
Collector-emitter saturation voltage (I
C
= 10mA, I
B
= 1mA)
Transition frequency (V
CE
= 10V, I
E
= -5mA, f=100MHz)
Input resistor
NOTE: "Fully ROHS compliant", "100% Sn plating (Pb-free)".
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
MIN.
50
50
5
-
-
100
-
-
7
TYP.
-
-
-
-
-
300
-
250
10
MAX.
-
-
-
0.5
0.5
600
0.3
-
13
UNITS
V
V
V
mA
mA
-
V
MHz
KW
2006-3
R
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