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2SA1471Q

Description
TRANSISTOR,BJT,PNP,60V V(BR)CEO,10A I(C),TO-220VAR
CategoryDiscrete semiconductor    The transistor   
File Size37KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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2SA1471Q Overview

TRANSISTOR,BJT,PNP,60V V(BR)CEO,10A I(C),TO-220VAR

2SA1471Q Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Maximum collector current (IC)10 A
ConfigurationSingle
Minimum DC current gain (hFE)70
Maximum operating temperature140 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)30 W
surface mountNO
Nominal transition frequency (fT)100 MHz
Base Number Matches1
Ordering number : EN2001C
2SA1471 / 2SC3748
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1471 / 2SC3748
Applications
60V / 10A High-Speed Switching
Applications
Various inductance lamp drivers for electrical equipment.
Inverters, converters (flash, fluorescent lamp lighting circuit).
Power amp (high power car stereo, motor controller).
High-speed switching (switching regulator, driver).
Features
Low saturation voltage.
Excellent current dependence of hFE.
Short switching time.
Micaless package facilitating mounting.
Specifications
( ) : 2SA1471
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(--)80
(--)60
(-
-)5
(--)10
(--)12
2
30
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
Conditions
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--)1A
70*
Ratings
min
typ
max
(--)0.1
(--)0.1
280*
Unit
mA
mA
*
: The 2SA1471/2SC3748 are classified by 1A hFE as follows :
Rank
Q
R
S
hFE
70 to 140
100 to 200
140 to 280
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83006 MS IM TC-00000114 / 72506FA MS IM TC-00000060 / O3103TN (KT) / 71598HA (KT) / 4027AT, TS No.2001-1/4

2SA1471Q Related Products

2SA1471Q 2SC3748Q
Description TRANSISTOR,BJT,PNP,60V V(BR)CEO,10A I(C),TO-220VAR TRANSISTOR,BJT,NPN,60V V(BR)CEO,10A I(C),TO-220
Reach Compliance Code compli compli
Maximum collector current (IC) 10 A 10 A
Configuration Single Single
Minimum DC current gain (hFE) 70 70
Maximum operating temperature 140 °C 150 °C
Polarity/channel type PNP NPN
Maximum power dissipation(Abs) 30 W 30 W
surface mount NO NO
Nominal transition frequency (fT) 100 MHz 100 MHz
Base Number Matches 1 1

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