-100mA / -50V Digital transistors
(with built-in resistors)
DTA114TM / DTA114TE / DTA114TUA / DTA114TKA
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)
Dimensions
(Unit : mm)
DTA114TM
0.2
DTA114TE
1.2
0.32
(3)
1.6
0.3
(3)
0.7
0.55
0.8
1.2
0.8
0.2
0.22
(1)(2)
0.4 0.4
0.8
0.5
0.2
0.2
0.5 0.5
ROHM : VMT3
(1) Base
(2) Emitter
(3) Collector
0.15
0.1Min.
0.13
(2)
(1)
1.6
ROHM : EMT3
1.0
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : 94
Abbreviated symbol : 94
DTA114TUA
2.0
0.3
(3)
0.9
0.2
0.7
DTA114TKA
(3)
2.9
0.4
1.1
0.8
1.25
2.1
(2)
(1)
ROHM : UMT3
EIAJ : SC-70
1.3
0.15
(1) Emitter
(2) Base
(3) Collector
0.95 0.95
0.3Min.
0.65 0.65
0.1Min.
( 2)
( 1)
1.6
2.8
ROHM : SMT3
EIAJ : SC-59
0.15
1.9
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Each lead has same dimensions
Abbreviated symbol : 94
Abbreviated symbol : 94
Inner
circuit
C
B
R
1
E
B : Base
C : Collector
E : Emitter
R
1
=10kΩ
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2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.06 - Rev.B
DTA114TM / DTA114TE / DTA114TUA / DTA114TKA
Packaging specifications
Package
Package type
Code
Basic ordering
unit (pieces)
Data Sheet
VMT3
Taping
EMT3
Taping
UMT3
Taping
SMT3
Taping
T2L
8000
TL
3000
−
T106
3000
−
−
T146
3000
−
−
−
Part No.
DTA114TM
DTA114TE
DTA114TUA
DTA114TKA
−
−
−
−
−
−
Absolute maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
150
150
−55
to
+150
Limits
DTA114TM DTA114TE DTA114TUA DTA114TKA
−50
−50
−5
−100
200
V
V
V
mA
mW
°C
°C
Unit
Electrical characteristics
(Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗
Characteristics of built-in transistor
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
∗
Min.
−50
−50
−5
−
−
−
100
7
−
Typ.
−
−
−
−
−
−
250
10
250
Max.
−
−
−
−0.5
−0.5
−0.3
600
13
−
Unit
V
V
V
μA
μA
V
−
kΩ
MHz
I
C
=−50μA
I
C
=−1mA
I
E
=−50μA
V
CB
=−50V
V
EB
=−4V
Conditions
I
C
/I
B
=−10mA/−1mA
V
CE
=−5V,
I
C
=−1mA
−
V
CE
=−10V,
I
E
=5mA,
f=100MHz
Electrical characteristic curves
1k
500
DC CURRENT GAIN : h
FE
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
V
CE
=−5V
−1
−500m
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100μ −200μ −500μ −1m −2m
Ta=100°C
25°C
−40°C
l
C
/l
B
=20
200
100
50
20
10
5
2
1
−100μ −200μ −500μ −1m −2m
−5m −10m −20m −50m−100m
Ta=100°C
25°C
−40°C
−5m −10m −20m −50m−100m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain vs. collector
current
Fig.2 Collector-emitter saturation
voltage vs. collector current
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2009 ROHM Co., Ltd. All rights reserved.
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2009.06 - Rev.B
Notice
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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