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DTA114TSATP

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SPT, SC-72, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size134KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

DTA114TSATP Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SPT, SC-72, 3 PIN

DTA114TSATP Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSC-72
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PSIP-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
VCEsat-Max0.3 V
-100mA / -50V Digital transistors
(with built-in resistors)
DTA114TM / DTA114TE / DTA114TUA / DTA114TKA
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)
Dimensions
(Unit : mm)
DTA114TM
0.2
DTA114TE
1.2
0.32
(3)
1.6
0.3
(3)
0.7
0.55
0.8
1.2
0.8
0.2
0.22
(1)(2)
0.4 0.4
0.8
0.5
0.2
0.2
0.5 0.5
ROHM : VMT3
(1) Base
(2) Emitter
(3) Collector
0.15
0.1Min.
0.13
(2)
(1)
1.6
ROHM : EMT3
1.0
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : 94
Abbreviated symbol : 94
DTA114TUA
2.0
0.3
(3)
0.9
0.2
0.7
DTA114TKA
(3)
2.9
0.4
1.1
0.8
1.25
2.1
(2)
(1)
ROHM : UMT3
EIAJ : SC-70
1.3
0.15
(1) Emitter
(2) Base
(3) Collector
0.95 0.95
0.3Min.
0.65 0.65
0.1Min.
( 2)
( 1)
1.6
2.8
ROHM : SMT3
EIAJ : SC-59
0.15
1.9
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Each lead has same dimensions
Abbreviated symbol : 94
Abbreviated symbol : 94
Inner
circuit
C
B
R
1
E
B : Base
C : Collector
E : Emitter
R
1
=10kΩ
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
1/2
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