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D1082UKR3

Description
VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-251, TO-251, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size23KB,2 Pages
ManufacturerSEMELAB
Environmental Compliance  
Download Datasheet Parametric Compare View All

D1082UKR3 Overview

VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-251, TO-251, 3 PIN

D1082UKR3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSEMELAB
Parts packaging codeTO-251
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage70 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandVERY HIGH FREQUENCY BAND
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
TetraFET
LAB
MECHANICAL DATA
Dimensions in mm (inches)
6.35
(0.250)
0.64
(0.025)
5.33
(0.210)
0.89
(0.035)
2 pls.
SEME
D1082UK
ROHS COMPLIANT
METAL GATE RF SILICON FET
2.29
(0.090)
0.51
(0.020)
REF.
0.64
4.32
(0.170) (0.025)
4
± 1˚
± 1˚
± 1˚
6.10
(0.240)
1.14
(0.045)
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
4W – 28V – 200MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
APPLICATIONS
• LOW C
rss
• SIMPLE BIAS CIRCUITS
1
16.76
(0.660)
2
3
2.29
(0.090)
4.57
(0.180)
0.76
(0.030)
REF.
0.51
(0.020)
REF.
• LOW NOISE
• HIGH GAIN – 13dB MINIMUM
• SURFACE MOUNT
1.02
(0.040)
APPLICATIONS
TO–251 PACKAGE
PIN 1 – GATE
PIN 3 – SOURCE
PIN 2 – DRAIN
PIN 4 – DRAIN
LOW COST DC to 200 MHz
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
STG
T
J
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
62.5W
70V
±20V
5A
–65 to 125°C
150°C
Semelab plc.
Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk
Prelim. 7/96

D1082UKR3 Related Products

D1082UKR3
Description VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-251, TO-251, 3 PIN
Is it lead-free? Lead free
Is it Rohs certified? conform to
Maker SEMELAB
Parts packaging code TO-251
package instruction IN-LINE, R-PSIP-T3
Contacts 3
Reach Compliance Code compliant
ECCN code EAR99
Other features LOW NOISE
Shell connection DRAIN
Configuration SINGLE
Minimum drain-source breakdown voltage 70 V
FET technology METAL-OXIDE SEMICONDUCTOR
highest frequency band VERY HIGH FREQUENCY BAND
JEDEC-95 code TO-251
JESD-30 code R-PSIP-T3
JESD-609 code e3
Number of components 1
Number of terminals 3
Operating mode ENHANCEMENT MODE
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Certification status Not Qualified
surface mount NO
Terminal surface TIN
Terminal form THROUGH-HOLE
Terminal location SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications AMPLIFIER
Transistor component materials SILICON

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