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2SC2551-O

Description
TRANSISTOR 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size295KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SC2551-O Overview

TRANSISTOR 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal

2SC2551-O Parametric

Parameter NameAttribute value
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-based maximum capacity4 pF
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
VCEsat-Max0.5 V
Base Number Matches1
2SC2551
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC2551
Hight Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
High voltage: V
CBO
= 300 V, V
CEO
= 300 V
Low saturation voltage: V
CE (sat)
= 0.5 V (max)
Small collector output capacitance: C
ob
= 3 pF (typ.)
Complementary to 2SA1091.
Industrial Applications
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
300
300
6
100
20
400
150
−55~150
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-92
SC-43
2-5F1B
Weight: 0.21 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Symbol
I
CBO
I
EBO
V
(BR) CBO
V
(BR) CEO
h
FE (1)
DC current gain
(Note)
h
FE (2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE (sat)
V
BE (sat)
f
T
C
ob
Test Condition
V
CB
=
300 V, I
E
=
0
V
EB
=
6 V, I
C
=
0
I
C
=
0.1 mA, I
E
=
0
I
C
=
1 mA, I
B
=
0
V
CE
=
10 V, I
C
=
20 mA
V
CE
=
10 V, I
C
=
1 mA
I
C
=
20 mA, I
B
=
2 mA
I
C
=
20 mA, I
B
=
2 mA
V
CE
=
10 V, I
C
=
20 mA
V
CB
=
20 V, I
E
=
0, f
=
1 MHz
Min
300
300
30
20
50
Typ.
80
3
Max
0.1
0.1
150
0.5
1.2
4
V
V
MHz
pF
Unit
μA
μA
V
V
Note: h
FE (1)
classification R: 30~90, O: 50~150
1
2007-11-01

2SC2551-O Related Products

2SC2551-O 2SC2551-R 2SC2551-O(TPE2)
Description TRANSISTOR 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal Small Signal Bipolar Transistor
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 ,
Reach Compliance Code unknow unknow unknown
Base Number Matches 1 1 1
Parts packaging code TO-92 TO-92 -
Contacts 3 3 -
ECCN code EAR99 EAR99 -
Maximum collector current (IC) 0.1 A 0.1 A -
Collector-based maximum capacity 4 pF 4 pF -
Collector-emitter maximum voltage 300 V 300 V -
Configuration SINGLE SINGLE -
Minimum DC current gain (hFE) 50 30 -
JEDEC-95 code TO-92 TO-92 -
JESD-30 code O-PBCY-T3 O-PBCY-T3 -
JESD-609 code e0 e0 -
Number of components 1 1 -
Number of terminals 3 3 -
Maximum operating temperature 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape ROUND ROUND -
Package form CYLINDRICAL CYLINDRICAL -
Polarity/channel type NPN NPN -
Maximum power dissipation(Abs) 0.4 W 0.4 W -
Certification status Not Qualified Not Qualified -
surface mount NO NO -
Terminal surface TIN LEAD TIN LEAD -
Terminal form THROUGH-HOLE THROUGH-HOLE -
Terminal location BOTTOM BOTTOM -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
Nominal transition frequency (fT) 80 MHz 80 MHz -
VCEsat-Max 0.5 V 0.5 V -
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