MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
2N5209
2N5210
1
2
3
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
50
50
4.0
50
625
5.0
1.5
12
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
V(BR)CEO
V(BR)CBO
ICBO
IEBO
50
50
—
—
—
—
50
50
Vdc
Vdc
nAdc
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–51
2N5209 2N5210
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100
µAdc,
VCE = 5.0 Vdc)
hFE
2N5209
2N5210
2N5209
2N5210
2N5209
2N5210
VCE(sat)
VBE(on)
100
200
150
250
150
250
—
—
300
600
—
—
—
—
0.7
0.85
Vdc
Vdc
—
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)(1)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base – Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 500
µAdc,
VCE = 5.0 Vdc, f = 20 MHz)
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 20
µAdc,
VCE = 5.0 Vdc, RS = 22 kΩ,
f = 1.0 kHz)
(IC = 20
µAdc,
VCE = 5.0 Vdc, RS = 10 kΩ,
f = 1.0 kHz)
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
2N5209
2N5210
NF
2N5209
2N5210
2N5209
2N5210
—
—
—
—
3.0
2.0
4.0
3.0
fT
Ccb
hfe
150
250
600
900
dB
30
—
—
4.0
MHz
pF
—
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2–52
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2N5209 2N5210
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
30
BANDWIDTH = 1.0 Hz
20
en , NOISE VOLTAGE (nV)
en , NOISE VOLTAGE (nV)
IC = 10 mA
3.0 mA
1.0 mA
RS
≈
0
20
RS
≈
0
f = 10 Hz
10
7.0
10 kHz
5.0
1.0 kHz
100 Hz
30
BANDWIDTH = 1.0 Hz
10
7.0
5.0
300
µA
3.0
10
20
50 100 200
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
3.0
0.01 0.02
0.05 0.1 0.2
0.5 1.0
2.0
IC, COLLECTOR CURRENT (mA)
100 kHz
5.0
10
Figure 2. Effects of Frequency
10
7.0
5.0
In, NOISE CURRENT (pA)
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
RS
≈
0
20
10
µA
50 100 200
3.0 mA
1.0 mA
300
µA
100
µA
30
µA
0
10
20
20
16
NF, NOISE FIGURE (dB)
Figure 3. Effects of Collector Current
BANDWIDTH = 1.0 Hz
IC = 10 mA
BANDWIDTH = 10 Hz to 15.7 kHz
12
500
µA
100
µA
4.0
10
µA
IC = 1.0 mA
8.0
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 4. Noise Current
100 Hz NOISE DATA
300
200
VT, TOTAL NOISE VOLTAGE (nV)
100
70
50
30
20
10
7.0
5.0
3.0
10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
20
BANDWIDTH = 1.0 Hz
100
µA
3.0 mA
1.0 mA
300
µA
30
µA
10
µA
IC = 10 mA
16
NF, NOISE FIGURE (dB)
Figure 5. Wideband Noise Figure
IC = 10 mA
3.0 mA
1.0 mA
300
µA
12
8.0
100
µA
4.0
BANDWIDTH = 1.0 Hz
0
10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
30
µA
10
µA
Figure 6. Total Noise Voltage
Figure 7. Noise Figure
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–53
2N5209 2N5210
h FE, DC CURRENT GAIN (NORMALIZED)
4.0
3.0
VCE = 5.0 V
2.0
TA = 125°C
25°C
1.0
0.7
0.5
0.4
0.3
0.2
0.01
– 55°C
0.02
0.03
0.05
0.1
0.2
0.3
0.5
IC, COLLECTOR CURRENT (mA)
1.0
2.0
3.0
5.0
10
Figure 8. DC Current Gain
1.0
TJ = 25°C
0.8
V, VOLTAGE (VOLTS)
R
θ
VBE, BASE–EMITTER
TEMPERATURE COEFFICIENT (mV/
°
C)
– 0.4
– 0.8
0.6
VBE @ VCE = 5.0 V
– 1.2
0.4
– 1.6
TJ = 25°C to 125°C
0.2
VCE(sat) @ IC/IB = 10
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
50
100
– 2.0
– 55°C to 25°C
– 2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mA)
20
50 100
Figure 9. “On” Voltages
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
Figure 10. Temperature Coefficients
8.0
6.0
C, CAPACITANCE (pF)
4.0
3.0
2.0
Cob
Ccb
Ceb
Cib
TJ = 25°C
500
300
200
100
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
VCE = 5.0 V
TJ = 25°C
1.0
0.8
0.1
0.2
1.0
2.0
5.0
0.5
10
20
VR, REVERSE VOLTAGE (VOLTS)
50
100
Figure 11. Capacitance
Figure 12. Current–Gain — Bandwidth Product
2–54
Motorola Small–Signal Transistors, FETs and Diodes Device Data
EMBOSSED TAPE AND REEL
SOT-23, SC-59, SC-70/SOT-323, SC–90/SOT–416, SOT-223 and SO-16 packages are available only in
Tape and Reel.
Use the appropriate suffix indicated below to order any of the SOT-23, SC-59,
SC-70/SOT-323, SOT-223 and SO-16 packages. (See Section 6 on Packaging for additional information).
SOT-23:
available in 8 mm Tape and Reel
Use the device title (which already includes the “T1” suffix) to order the 7 inch/3000 unit reel.
Replace the “T1” suffix in the device title with a “T3” suffix to order the 13 inch/10,000 unit reel.
available in 8 mm Tape and Reel
Use the device title (which already includes the “T1” suffix) to order the 7 inch/3000 unit reel.
Replace the “T1” suffix in the device title with a “T3” suffix to order the 13 inch/10,000 unit reel.
available in 8 mm Tape and Reel
Use the device title (which already includes the “T1” suffix) to order the 7 inch/3000 unit reel.
Replace the “T1” suffix in the device title with a “T3” suffix to order the 13 inch/10,000 unit reel.
available in 12 mm Tape and Reel
Use the device title (which already includes the “T1” suffix) to order the 7 inch/1000 unit reel.
Replace the “T1” suffix in the device title with a “T3” suffix to order the 13 inch/4000 unit reel.
available in 16 mm Tape and Reel
Add an “R1” suffix to the device title to order the 7 inch/500 unit reel.
Add an “R2” suffix to the device title to order the 13 inch/2500 unit reel.
SC-59:
SC-70/
SOT-323:
SOT-223:
SO-16:
RADIAL TAPE IN FAN FOLD BOX OR REEL
TO-92 packages are available in both bulk shipments and in Radial Tape in Fan Fold Boxes or Reels.
Fan Fold Boxes and Radial Tape Reel are the best methods for capturing devices for automatic insertion in
printed circuit boards.
TO-92:
available in Fan Fold Box
Add an “RLR” suffix and the appropriate Style code* to the device title to order the Fan Fold box.
available in 365 mm Radial Tape Reel
Add an “RLR” suffix and the appropriate Style code* to the device title to order the Radial Tape
Reel.
*Refer to Section 6 on Packaging for Style code characters and additional information on ordering
*requirements.
DEVICE MARKINGS/DATE CODE CHARACTERS
SOT-23, SC-59, SC-70/SOT-323, and the SC–90/SOT–416 packages have a device marking and a date
code etched on the device.
The generic example below depicts both the device marking and a representa-
tion of the date code that appears on the SC-70/SOT-323, SC-59 and SOT-23 packages.
ABC
D
The “D” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the
part was manufactured.
2–2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MCU
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