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2SA1015-O-AP

Description
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size548KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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2SA1015-O-AP Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

2SA1015-O-AP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2SA1015-O
2SA1015-Y
2SA1015-GR
PNP Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
Features
Capable of 0.4Watts of Power Dissipation.
Collector-current:
-0.15A
Collector-base Voltage:
-50V
Operating and storage junction temperature range: -55
O
C to +125
O
C
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Marking:A1015
Lead Free Finish/Rohs Compliant ("P"Suffix designates
Compliant. See ordering information)
Halogen
free available upon request by adding suffix "-HF"
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=-0.1mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-100uAdc, I
E
=0)
Emitter-Base
Breakdown Voltage
(I
E
=-100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=
-
50Vdc, I
E
=0)
Emitter Cutoff Current
(V
EB
=
-
5.0Vdc, I
C
=0)
DC Current Gain
(I
C
=-2.0mAdc, V
CE
=
-
6.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-100mAdc, I
B
=-10mAdc)
Base-Emitter Saturation Voltage
(I
C
=-100mAdc, I
B
=-10mAdc)
Transistor Frequency
(I
C
=-1.0mAdc, V
CE
=-10Vdc, f=30MHz)
Collector Output Capacitance
(V
CB
=-10Vdc, I
E
=0,f=1MHz)
Noise Figure
(V
CE
=-6Vdc, I
C
=-0.1mAdc,f=1KHz,Rg=10K)
---
---
Min
-50
-50
-5
---
---
Max
---
---
---
-0.1
-0.1
Units
Vdc
Vdc
Vdc
uAdc
uAdc
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
B
C
ON CHARACTERISTICS
h
FE
V
CE(sat)
V
BE(sat)
70
---
---
400
-0.3
-1.1
---
Vdc
Vdc
D
SMALL-SIGNAL CHARACTERISTICS
f
T
C
OB
NF
80
---
7.0
6.0
MHz
pF
dB
G
E
E
C
B
C
B
STRAIGHT LEAD BENT LEAD
BULK PACK
AMMO PACK
DIMENSIONS
CLASSIFICATION OF H
FE (1)
Rank
Range
O
70-140
Y
120-240
GR
200-400
DIM
A
B
C
D
E
G
INCHES
MIN
.175
.175
.500
.016
.135
.095
.173
MM
MAX
.185
.185
---
.020
.145
.105
.220
MIN
4.45
4.45
12.70
0.41
3.43
2.42
4.40
MAX
4.70
4.70
---
0.63
3.68
2.67
5.60
NOTE
Straight Lead
Bent Lead
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
www.mccsemi.com
Revision: I
1 of
3
2013/04/02

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