2SA1015-Y datasheet, PDF - EEWORLD Datasheet

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2SA1015-Y: DescriptionSmall Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size73KB，2 Pages; ManufacturerMicro Commercial Components (MCC)

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2SA1015-Y Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3

2SA1015-Y Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.15 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz
Base Number Matches	1

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MCC

Micro Commercial Components

TM

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

2SA1015-O

2SA1015-Y

2SA1015-GR

PNP Silicon

Plastic-Encapsulate

Transistor

TO-92

A

E

Features

•

Capable of 0.4Watts of Power Dissipation.

Collector-current 0.15A

Collector-base Voltage 50V

Operating and storage junction temperature range: -55

O

C to +150

O

C

Case Material: Molded Plastic.

Classification Rating 94V-0

Marking:A1015

UL Flammability

Electrical Characteristics @ 25

O

C Unless Otherwise Specified

Symbol

Parameter

Collector-Emitter Breakdown Voltage

(I

C

=0.1mAdc, I

B

=0)

Collector-Base Breakdown Voltage

(I

C

=100uAdc, I

E

=0)

Collector Cutoff Current

(V

CB

=50Vdc, I

E

=0)

Emitter Cutoff Current

(V

EB

=5.0Vdc, I

C

=0)

DC Current Gain

(I

C

=2.0mAdc, V

CE

=6.0Vdc)

Collector-Emitter Saturation Voltage

(I

C

=100mAdc, I

B

=10mAdc)

Base-Emitter Saturation Voltage

(I

C

=100mAdc, I

B

=10mAdc)

Base-Emitter Voltage

(I

E

=310mAdc)

Transistor Frequency

(I

C

=1.0mAdc, V

CE

=10Vdc, f=30MHz)

Min

50

---

Max

---

0.1

Units

Vdc

uAdc

C

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

I

CBO

I

EBO

B

ON CHARACTERISTICS

h

FE

V

CE(sat)

V

BE(sat)

V

BE

70

---

400

0.3

1.1

1.45

---

Vdc

D

E

C

B

SMALL-SIGNAL CHARACTERISTICS

f

T

80

---

MHz

G

DIMENSIONS

INCHES

MIN

.170

.550

.010

.130

.010

MM

MIN

4.33

4.30

13.97

0.36

3.30

2.44

CLASSIFICATION OF H

FE (1)

Rank

Range

O

70-140

Y

120-240

GR

200-400

DIM

A

B

C

D

E

G

MAX

.190

.590

.020

.160

.104

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

www.mccsemi.com

1 of 2

Revision: 5

2007/03/01

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