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2N7334E3

Description
Power Field-Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size488KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

2N7334E3 Overview

Power Field-Effect Transistor

2N7334E3 Parametric

Parameter NameAttribute value
Objectid1288696893
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
2N7334
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
QUAD N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/597
DESCRIPTION
This 2N7334 device is military qualified up to a JANTXV level for high-reliability applications.
Microsemi also offers numerous other products to meet higher and lower power voltage
regulation applications.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered 2N7334 number.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/597.
RoHS compliant versions available (commercial grade only).
MO-036AB
Package
APPLICATIONS / BENEFITS
High frequency operation.
Lightweight.
ESD rated to class 1A.
MAXIMUM RATINGS
@
T
A
= +25 ºC unless otherwise noted.
Parameters / Test Conditions
Operating & Storage Temperature
Thermal Resistance, Junction to Ambient
Gate – Source Voltage
Continuous Drain Current @ T
C
= +25 °C
Continuous Drain Current @ T
C
= +100 °C
Max. Power Dissipation @ T
C
= +25 ºC (free air)
(1)
Symbol
T
op
, T
stg
1 die
4 die
R
ӨJA
V
GS
I
D1
I
D2
P
T
MAX R
ds(on)
I
S
E
AS
E
AR
I
AR
I
DM
(1, 2)
Value
-55 to +150
90
50
± 20
1.0
0.6
1.4
0.70
1.4
1.0
75
.14
1.0
4.0
Unit
°C
ºC/W
V
A
A
W
A
MJ
MJ
A
A (pk)
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Maximum Drain to Source On State Resistance
@ T
J
= +25 ºC
@ T
J
= +150 ºC
Collector Efficiency
Single Pulse Avalanche Energy Capability
Repetitive Avalanche Energy Capability
Rated Avalanche Current (repetitive and nonrepetitive)
Off-State Current
Notes:
1. Derated linearly 11 mW/°C for T
C
> +25 °C.
2. The following formula derives the maximum theoretical I
D
limit. I
D
is limited by package and internal wires
and may also be limited by pin diameter:
3. I
DM
= 4 x I
D1
as calculated in note 2.
T4-LDS-0212, Rev. 2 (121516)
©2012 Microsemi Corporation
Page 1 of 6

2N7334E3 Related Products

2N7334E3 JAN2N7334 JANTX2N7334 JANTXV2N7334 2N7334
Description Power Field-Effect Transistor Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN MOSFET 4N-CH 100V 1A MO-036AB
Objectid 1288696893 1288696957 1821746323 1821746325 -
Reach Compliance Code unknown unknown unknown unknown -
ECCN code EAR99 EAR99 EAR99 EAR99 -
Is it Rohs certified? - incompatible incompatible incompatible -
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
Polarity/channel type - N-CHANNEL N-CHANNEL N-CHANNEL -
Certification status - Qualified Qualified Qualified -
surface mount - NO NO NO -
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