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Datasheet> All Categories > Discrete semiconductor> The transistor> 2N735
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2N735

Description
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size51KB，1 Pages
ManufacturerSolitron Devices Inc.
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2N735 Overview

Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN

2N735 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeBCY
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Base Number Matches1

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Download Datasheet
small signal transistors
71
SILICON NPN PLANAR
TYPE
NUMBERS
VC8
2N 929
2N 930
2N 756
2N 757
2N 758
2N 759
2N 760
2N 929A
2N 930A
2N 930B
2N 2586
2N 756A
2N 757A
2N 2483
2N 2484
2N 2484A
2N 3117
2N 758A
2N 758B
2N 759A
2N 759B
2N 760A
2N 760B
2N 734
2N735
2N736
2N 734A
2N 735A
2N 736A
2N 736B
2N 2463
2N 2464
2N 2465
2N 2466
2N 738
2N 739
2N740
2N 738A
2N 739A
2N 740A
RATED
BREAKDOWN
VOLTAGES
VCE
VE8
Min.
Max.
h
fe
VcE(sat)
Ic(mA)
VCE
(Volts)
Max.
(Volts)
Ic
(rnA)
18
(rnA)
IC80
Max.
(nA)
f
t
Typ.
(MHz)
•
45
45
45
45
45
45
45
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
80
80
80
80
80
80
80
100
100
100
100
125
125
125
125
125
125
45
45
45
45
45
45
45
45
45
45
45
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
80
80
80
80
80
80
5
5
6
6
8
8
8
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
5
5
5
6
6
8
8
8
8
8
8
5
5
5
8
8
8
40t
lOOt
12
18
18
36
76
40t
lOOt
lOOt
150
12
18
40t
lOOt
lOOt
400
18
18
36
36
76
76
20
40
80
20
40
80
80
30
70
120
170
20
40
80
20
40
80
120t
300t
22
40
90
90
333
120t.
30dt
300t
600
22
40
120t
soot
soot
900
90
90
90
90
333
333
50
100
200
50
100
200
200
80
130
180
230
50
100
200
50
100
200
0.01
0.01
1.0
1.0
1.0
1.0
1.0
0.01
0.01
0.01
0.01
1.0
1.0
0.01
0.01
0.01
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
1.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
1.0
1.0
0.35
0.35
0.35
0.35
1.0
0.5
1.0
0.5
1.0
0.5
1.0
1.0
1.0
0.5
0.5
0.6
0.5
0.3
0.3
0.3
0.3
1.0
1.0
1.0
0.5
0.5
0.5
10
10
10
10
10
10
10
10
10
10
10
10
10
1
1
1
1
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
0.5
0.5.
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
1.0
1.0
0.1
0.1
0.1
0.1
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
1.0
1.0
2.0
2.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
1.0
1.0
2.0
10
10
200
200
200
200
200
2
2
2
2
100
100
10
10
10
10
100
5
100
5
100
5
1000
1000
1000
5
5
500
5
2
2
2
2
1000
1000
1000
5
5
5
30
30
50
50
50
75
60
45
45
45
45
50
50
60
60
60
100
50
50
175
175
200
200
30
50
100
30
50
200
200
100
200
225
250
30
60
200
30
60
200
TO -16
400
mWatts Max.
@
T...
=
25°C

2N735 Related Products

2N735 2N760A 2N3117 2N930A 2N2483 2N929 2N2586 2N2484 2N930
Description Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Parts packaging code BCY BCY BCY BCY BCY BCY BCY BCY BCY
package instruction CYLINDRICAL, O-MBCY-W3 TO-18, 3 PIN TO-18, 3 PIN TO-18, 3 PIN TO-18, 3 PIN CYLINDRICAL, O-MBCY-W3 TO-18, 3 PIN TO-18, 3 PIN TO-18, 3 PIN
Contacts 3 3 3 3 3 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknown unknow
Maximum collector current (IC) 0.05 A 0.1 A 0.05 A 0.03 A 0.05 A 0.03 A 0.03 A 0.05 A 0.03 A
Collector-emitter maximum voltage 60 V 60 V 60 V 45 V 60 V 45 V 45 V 60 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 76 400 100 40 40 150 100 100
JEDEC-95 code TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3
Maximum operating temperature 200 °C 200 °C 200 °C 175 °C 200 °C 175 °C 200 °C 200 °C 175 °C
Package body material METAL METAL METAL METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.5 W 0.5 W 0.36 W 1.8 W 0.36 W 1.8 W 0.3 W 0.36 W 1.8 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 50 MHz 200 MHz 100 MHz 45 MHz 60 MHz 30 MHz 45 MHz 60 MHz 30 MHz
Base Number Matches 1 1 1 1 1 1 1 1 -

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