EEWORLDEEWORLDEEWORLD

Part Number

Search

2SC3570M

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size239KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SC3570M Overview

Transistor

2SC3570M Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3570
DESCRIPTION
·Collector-Emitter
Sustaining Voltage
: V
CEO(SUS)
= 400V(Min.)
·Low
Collector Saturation Voltage
·Fast
Switching Speed
APPLICATIONS
·Designed
for switching regulator, DC-DC converter and
high frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
500
V
400
V
8
V
5
A
10
A
2.5
A
I
C
Collector Current-Continuous
I
CM
Collector Current-Peak
I
B
B
Base Current-Continuous
Total Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
25
W
T
J
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn

2SC3570M Related Products

2SC3570M 2SC3570K 2SC3570L
Description Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow
Base Number Matches 1 1 1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1932  255  2391  1213  2298  39  6  49  25  47 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号