INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3570
DESCRIPTION
·Collector-Emitter
Sustaining Voltage
: V
CEO(SUS)
= 400V(Min.)
·Low
Collector Saturation Voltage
·Fast
Switching Speed
APPLICATIONS
·Designed
for switching regulator, DC-DC converter and
high frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
w
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i
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VALUE
UNIT
500
V
400
V
8
V
5
A
10
A
2.5
A
I
C
Collector Current-Continuous
I
CM
Collector Current-Peak
I
B
B
Base Current-Continuous
Total Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
25
W
T
J
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEX(SUS)-1
V
CEX(SUS)-2
V
CE
(sat)
V
BE
(sat)
I
CBO
I
CER
I
CEX
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
CONDITIONS
I
C
= 2.0A ; I
B
= 0.4A, L= 1mH
I
C
= 2.0A ; I
B1
=-I
B2
= 0.4A,
L=180μH,clamped
I
C
= 4A; I
B1
= 0.8A; I
B2
= -0.4A,
L= 180μH,clamped
I
C
= 2A; I
B
= 0.4A
B
2SC3570
MIN
400
450
400
MAX
UNIT
V
V
V
1.0
1.2
10
1.0
10
1.0
10
20
10
80
V
V
μA
mA
μA
mA
μA
I
C
= 2A; I
B
= 0.4A
B
V
CB
= 400V; I
E
= 0
V
CE
= 400V; R
BE
= 51Ω, T
a
=125℃
Switching times
t
on
t
stg
t
f
w
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i
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cs
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w
w
V
CE
= 400V; V
BE(off)
= -1.5V
V
CE
= 400V; V
BE(off)
= -1.5V, T
a
=125℃
V
EB
= 5V; I
C
=0
I
C
= 0.5A; V
CE
= 5V
I
C
= 2.0A; V
CE
= 5V
I
C
= 2A ,R
L
= 75Ω,
I
B1
= -I
B2
= 0.4A, V
CC
≈
150V
Turn-on Time
Storage Time
Fall Time
1.0
2.0
0.7
μs
μs
μs
h
FE-2
Classifications
M
20-40
L
30-60
K
40-80
isc Website:www.iscsemi.cn
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