DATA SHEET
SILICON POWER TRANSISTOR
2SC3570
NPN
SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-VOLTAGE
HIGH-SPEED SWITCHING
The 2SC3570 is a mold power transistor developed for high-
voltage high-speed switching, and is ideal for use in drivers such as
switching regulators, DC/DC converters, and high-frequency power
amplifiers.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• Low collector saturation voltage:
V
CE(sat)
= 1.0 V MAX. (@ 2 A)
• Fast switching speed:
t
f
≤
0.7
µ
s MAX. (@ 2 A)
• Wide base reverse-bias SOA:
V
CEX(SUS)
= 450 V MIN. (@ 2 A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(Tc = 25°C)
P
T
(Ta = 25°C)
T
j
T
stg
Ratings
500
400
8.0
5.0
10
2.5
25
2.0
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Electrode Connection
1. Base
2. Collector
3. Emitter
* PW
≤
300
µ
s, duty cycle
≤
10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16188EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SC3570
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector to emitter voltage
Collector to emitter voltage
Collector to emitter voltage
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
Symbol
V
CEO(SUS)
V
CEX(SUS)1
V
CEX(SUS)2
I
CBO
I
CER
I
CEX1
I
CEX2
I
EBO
h
FE1
*
h
FE2
*
V
CE(sat)
*
V
BE(sat)
*
t
on
t
stg
t
f
Conditions
I
C
= 2.0 A, I
B1
= 0.4 A, L = 1 mH
I
C
= 2.0 A, I
B1
=
−I
B2
= 0.4 A,
L = 180
µ
H, clamped
I
C
= 4.0 A, I
B1
= 0.8 A,
−I
B2
= 0.4 A,
L = 180
µ
H, clamped
V
CB
= 400 V, I
E
= 0
V
CE
= 400 V, R
BE
= 51
Ω,
Ta = 125°C
V
CE
= 400 V, V
BE(OFF)
=
−1.5
V
V
CE
= 400 V, V
BE(OFF)
=
−1.5
V,
Ta = 125°C
V
EB
= 5.0 V, I
C
= 0
V
CE
= 5.0 V, I
C
= 0.5 A
V
CE
= 5.0 V, I
C
= 2.0 A
I
C
= 2.0 A, I
B
= 0.4 A
I
C
= 2.0 A, I
B
= 0.4 A
I
C
= 2.0 A, R
L
= 75
Ω,
I
B1
=
−I
B2
= 0.4 A, V
CC
≅
150 V
Refer to the test circuit.
20
10
1.0
1.2
1.0
2.0
0.7
V
V
MIN.
400
450
400
10
1.0
10
1.0
10
80
TYP.
MAX.
Unit
V
V
V
µ
A
mA
µ
A
mA
µ
A
µ
s
µ
s
µ
s
* Pulse test PW
≤
350
µ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
h
FE1
M
20 to 40
L
30 to 60
K
40 to 80
TYPICAL CHARACTERISTICS (Ta = 25°C)
°
Total Power Dissipation P
T
(W)
Case Temperature T
C
(
°
C)
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
2
Data Sheet D16188EJ1V0DS
2SC3570
7UDQVLHQW 7KHUPDO 5HVLVWDQFH 5
,
&
&DVH 7HPSHUDWXUH 7
&
&ROOHFWRU &XUUHQW ,
&
&ROOHFWRU &XUUHQW ,
&
&ROOHFWRU WR (PLWWHU 9ROWDJH 9
&(
&ROOHFWRU WR (PLWWHU 9ROWDJH 9
&(
&ROOHFWRU 6DWXUDWLRQ 9ROWDJH 9
%DVH 6DWXUDWLRQ 9ROWDJH 9
'& &XUUHQW *DLQ K
)(
&ROOHFWRU &XUUHQW ,
&
&ROOHFWRU &XUUHQW ,
&
Data Sheet D16188EJ1V0DS
3
京公网安备 11010802033920号
EEWORLD
