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2SC4177-L5-C

Description
Small Signal Bipolar Transistor, 0.1A I(C), NPN
CategoryDiscrete semiconductor    The transistor   
File Size106KB,1 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

2SC4177-L5-C Overview

Small Signal Bipolar Transistor, 0.1A I(C), NPN

2SC4177-L5-C Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompli
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)135
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
surface mountYES
Base Number Matches1
2SC4177
Elektronische Bauelemente
0.1A , 60V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-323
A
3
3
High DC Current Gain.
High Voltage.
Complementary to 2SA1611
1
L
Top View
2
C B
1
2
APPLICATIONS
K
E
D
General Purpose Amplification
F
G
H
J
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SC4177-L4
90~180
L4
2SC4177-L5
135~270
L5
2SC4177-L6
200~400
L6
2SC4177-L7
300~600
L7
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
Collector
PACKAGE INFORMATION
Package
SOT-323
MPQ
3K
LeaderSize
7’ inch

Base


Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction & Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
60
50
5
100
150
833
150, -55~150
Unit
V
V
V
mA
mW
°C
/ W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
1
Collector-Base Saturation Voltage
Base-emitter Saturation Voltage
Base-emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
Min.
60
50
5
-
-
90
-
-
0.55
-
-
Typ.
-
-
-
-
-
-
-
-
-
250
3
Max.
-
-
-
100
100
600
0.3
1
0.65
-
-
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Condition
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=1mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=1mA
V
CE
=6V, I
C
=10mA
V
CB
=6V, I
E
=0, f=1MHz
Note:
1. Pulse test: pulse width≦350μs, duty cycle≦2.0%
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Mar-2011 Rev. A
Page 1 of 1

2SC4177-L5-C Related Products

2SC4177-L5-C 2SC4177-L4 2SC4177-L4-C 2SC4177-L5 2SC4177-L7-C 2SC4177-L7 2SC4177-L6 2SC4177-L6-C
Description Small Signal Bipolar Transistor, 0.1A I(C), NPN Small Signal Bipolar Transistor, 0.1A I(C), NPN Small Signal Bipolar Transistor, 0.1A I(C), NPN Small Signal Bipolar Transistor, 0.1A I(C), NPN Small Signal Bipolar Transistor, 0.1A I(C), NPN Small Signal Bipolar Transistor, 0.1A I(C), NPN Small Signal Bipolar Transistor, 0.1A I(C), NPN Small Signal Bipolar Transistor, 0.1A I(C), NPN
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to
Reach Compliance Code compli compli compli compli compli compli compli compli
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Configuration Single Single Single Single Single Single Single Single
Minimum DC current gain (hFE) 135 90 90 135 300 300 200 200
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W
surface mount YES YES YES YES YES YES YES YES
Base Number Matches 1 1 1 1 1 1 1 1
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