EEWORLDEEWORLDEEWORLD

Part Number

Search

DS110-12F

Description
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 160A, 1200V V(RRM), Silicon, DO-205AC, DO-30, 1 PIN
CategoryDiscrete semiconductor    diode   
File Size34KB,2 Pages
ManufacturerIXYS
Download Datasheet Parametric Compare View All

DS110-12F Overview

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 160A, 1200V V(RRM), Silicon, DO-205AC, DO-30, 1 PIN

DS110-12F Parametric

Parameter NameAttribute value
MakerIXYS
Parts packaging codeDO-30
package instructionO-MUPM-D1
Contacts1
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-205AC
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current3150 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature180 °C
Maximum output current160 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
surface mountNO
technologyAVALANCHE
Terminal formSOLDER LUG
Terminal locationUPPER
DS 110
DSA 110
DSI 110
DSAI 110
Rectifier Diodes
Avalanche Diodes
V
RSM
V
900
1300
1300
1700
1900
-
-
V
(BR)min
x
V
R R M
V
V
800
1200
DS
DS
DSA
DSA
DSA
Anode
on
stud
110-08F
110-12F
110-12F
110-16F
110-18F
Cathode
on
DSI
DSI
DSAI
DSAI
DSAI
stud
110-08F
110-12F
110-12F
110-16F
110-18F
V
RRM
= 800 - 1800 V
I
F(RMS)
= 250 A
I
F(AV)M
= 160 A
DO-205 AC
C
A
DS
DSA
A
C
DSI
DSAI
1300 1200
1750 1600
1950 1800
x
Only for Avalanche Diodes
Symbol
I
F(RMS)
I
F(AV)M
P
RSM
I
FSM
Test
Conditions
Maximum
250
160
35
3150
3380
2800
3000
Ratings
A
A
kW
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
°C
°C
°C
Nm
lb.in.
g
Values
T
(vj)
= T
(vj)m
T
case
= 100°C; 180° sine
DSA(I) types, T
(vj)
= T
(vj)m
, t
p
= 10
µs
T
(vj)
= 45°C;
V
R
= 0
T
(vj)
= T
(vj)m
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
A = Anode
C = Cathode
M12
Features
International standard package,
JEDEC DO-205 AC (~DO30)
Planar glassivated chips
q
q
I
2
t
T
(vj)
= 45°C
V
R
= 0
T
(vj)
= T
(vj)m
V
R
= 0
49 600
48 000
39 200
37 800
-40...+180
180
-40...+180
Applications
High power rectifiers
DC supplies
Field supply for DC motors
Power supplies
q
q
q
q
q
q
q
T
(vj)
T
(vj)m
T
stg
M
d
Weight
Symbol
I
R
q
Mounting torque
16-20
142-177
130
Characteristic
10
1.4
0.85
1.1
0.35
0.39
0.45
4.25
4.25
100
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
mm
(1
mm
Dimensions in
=
0.0394")
Test
Conditions
T
(vj)
= T
(vj)m
; V
R
= V
RRM
I
F
= 500 A; T
(vj)
= 25°C
mA
V
V
mΩ
K/W
K/W
K/W
mm
mm
m/s
2
V
F
V
T0
r
T
R
thJC
R
thJH
d
S
d
A
a
For power-loss calculations only
T
(vj)
= T
(vj)m
DC current
180° sine
DC current
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Data according to IEC 747-2
IXYS reserves the right to change limits, test conditions and dimensions
I
XYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Fax: +49-6206-503629

DS110-12F Related Products

DS110-12F DSA110-18F DSA110-16F DSAI110-18F DSAI110-16F
Description Rectifier Diode, Avalanche, 1 Phase, 1 Element, 160A, 1200V V(RRM), Silicon, DO-205AC, DO-30, 1 PIN Rectifier Diode, Avalanche, 1 Phase, 1 Element, 160A, 1800V V(RRM), Silicon, DO-205AC, DO-30, 1 PIN Rectifier Diode, Avalanche, 1 Phase, 1 Element, 160A, 1600V V(RRM), Silicon, DO-205AC, DO-30, 1 PIN Rectifier Diode, Avalanche, 1 Phase, 1 Element, 160A, 1800V V(RRM), Silicon, DO-205AC, DO-30, 1 PIN Rectifier Diode, Avalanche, 1 Phase, 1 Element, 160A, 1600V V(RRM), Silicon, DO-205AC, DO-30, 1 PIN
Maker IXYS IXYS IXYS IXYS IXYS
Parts packaging code DO-30 DO-30 DO-30 DO-30 DO-30
package instruction O-MUPM-D1 O-MUPM-D1 DO-30, 1 PIN DO-30, 1 PIN DO-30, 1 PIN
Contacts 1 1 1 1 1
Reach Compliance Code unknown unknown unknown compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ANODE ANODE ANODE CATHODE CATHODE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-205AC DO-205AC DO-205AC DO-205AC DO-205AC
JESD-30 code O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
Maximum non-repetitive peak forward current 3150 A 3150 A 3150 A 3150 A 3150 A
Number of components 1 1 1 1 1
Phase 1 1 1 1 1
Number of terminals 1 1 1 1 1
Maximum operating temperature 180 °C 180 °C 180 °C 180 °C 180 °C
Maximum output current 160 A 160 A 160 A 160 A 160 A
Package body material METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1200 V 1800 V 1600 V 1800 V 1600 V
surface mount NO NO NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG
Terminal location UPPER UPPER UPPER UPPER UPPER

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1684  1756  813  117  308  34  36  17  3  7 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号