Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1021
DESCRIPTION
·With
TO-126 package
·High
breakdown voltage
·Large
current capacity
APPLICATIONS
·For
color TV sound output;converters
Inverters applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
20
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-150
-150
-6
-1.5
-2.5
1.0
W
UNIT
V
V
V
A
A
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=-1mA; R
BE
=∞
I
C
=-10μA; I
E
=0
I
E
=-10μA ; I
C
=0
I
C
=-500mA; I
B
=-50mA
B
2SA1021
MIN
TYP.
-150
-150
-6
MAX
UNIT
V
V
V
-0.5
-1.2
-1.0
-1.0
60
15
320
V
V
μA
μA
I
C
=-500mA; I
B
=-50mA
B
V
CB
=-120V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-150mA ; V
CE
=-5V
I
C
=-50mA ; V
CE
=-10V
MHz
2
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