EEWORLDEEWORLDEEWORLD

Part Number

Search

2SA1687-5

Description
TRANSISTOR,BJT,PNP,50V V(BR)CEO,150MA I(C),SOT-23
CategoryDiscrete semiconductor    The transistor   
File Size38KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

2SA1687-5 Overview

TRANSISTOR,BJT,PNP,50V V(BR)CEO,150MA I(C),SOT-23

2SA1687-5 Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Maximum collector current (IC)0.15 A
ConfigurationSingle
Minimum DC current gain (hFE)135
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
surface mountYES
Nominal transition frequency (fT)130 MHz
Base Number Matches1
Ordering number:ENN3013
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1687/2SC4446
Low-Frequency
General-Purpose Amplifier Applications
Features
· Ultrasmall-sized package permitting the 2SA1687/
2SC4446-applied sets to be made small and slim.
· High V
EBO
.
Package Dimensions
unit:mm
2059B
[2SA1687/2SC4446]
0.425
0.3
0.2
0 to 0.1
1.250
2.1
0.6
0.9
0.15
3
0.425
1
2
0.65 0.65
2.0
0.3
( ) : 2SA1687
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
Ratings
(–)60
(–)50
(–)15
(–)150
(–)300
(–)30
150
150
–55 to +150
Unit
V
V
V
mA
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
VCB=(–)40V, IE=0
VEB=(–)10V, IC=0
VCE=(–)6V, IC=(–)1mA
VCE=(–)6V, IC=(–)1mA
135*
130
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
600*
MHz
Unit
µA
µA
* : The 2SA1687/2SC4446 are classified by 1mA h
FE
as follows :
Rank
hFE
5
135 to 270
6
200 to 400
7
300 to 600
Marking : D (2SA1687)
H (2SC4446)
h
FE
rank : 5, 6, 7
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1003TN (KT)/5189MO, TS No.3013-1/5

2SA1687-5 Related Products

2SA1687-5 2SA1687-7
Description TRANSISTOR,BJT,PNP,50V V(BR)CEO,150MA I(C),SOT-23 TRANSISTOR,BJT,PNP,50V V(BR)CEO,150MA I(C),SOT-23
Reach Compliance Code compli compli
Maximum collector current (IC) 0.15 A 0.15 A
Configuration Single Single
Minimum DC current gain (hFE) 135 300
Maximum operating temperature 150 °C 150 °C
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.15 W 0.15 W
surface mount YES YES
Nominal transition frequency (fT) 130 MHz 130 MHz
Base Number Matches 1 1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2524  1383  2423  1224  1637  51  28  49  25  33 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号