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2N6387DW

Description
10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size143KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

2N6387DW Overview

10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

2N6387DW Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-220AB
package instructionTO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage60 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)1000
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
2N6387, 2N6388
Plastic Medium-Power
Silicon Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
http://onsemi.com
High DC Current Gain
h
FE
= 2500 (Typ) @ I
C
= 4.0 Adc
Collector−Emitter Sustaining Voltage
@ 100 mAdc
V
CEO(sus)
= 60 Vdc (Min)
2N6387
= 80 Vdc (Min)
2N6388
Low Collector−Emitter Saturation Voltage
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 5.0 Adc
2N6387, 2N6388
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
TO−220AB Compact Package
Pb−Free Packages are Available*
DARLINGTON NPN SILICON
POWER TRANSISTORS
8 AND 10 AMPERES
65 WATTS, 60
80 VOLTS
MARKING
DIAGRAM
MAXIMUM RATINGS
(Note 1)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Continuous
Peak
Base Current
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
Total Power Dissipation @ T
A
= 25_C
Derate above 25_C
Operating and Storage Junction,
Temperature Range
2N6387
2N6388
2N6387
2N6388
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
P
D
T
J
, T
stg
Value
60
80
60
80
5.0
10
15
250
65
0.52
2.0
0.016
−65
to +150
Unit
Vdc
Vdc
Vdc
Adc
mAdc
W
W/°C
W
W/°C
°C
2N6387
Symbol
R
qJC
Max
1.92
Unit
_C/W
2N6387G
2N6388
2N6388G
4
TO−220AB
CASE 221A
STYLE 1
1
2
2N638xG
AYWW
3
2N638x = Device Code
x = 7 or 8
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
62.5
R
qJA
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2011
October, 2011
Rev. 14
1
Publication Order Number:
2N6387/D
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