Ordering number:ENN3233
PNP Epitaxial Planar Silicon Transistors
2SA1689
TV Camera Deflection
High-Voltage Driver Applications
Features
· High breakdown voltage.
· Small reverse transfer capacitance and excellent high
frequency characteristic.
· Excellent DC current gain.
· Adoption of FBET process.
Package Dimensions
unit:mm
2003B
[2SA1689]
5.0
4.0
4.0
0.45
0.5
0.6
2.0
5.0
0.45
0.44
1
2
3
14.0
1.3
1.3
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
JEDEC : TO-92
EIAJ : SC-43
SANYO : NP
1 : Emitter
2 : Collector
3 : Base
Ratings
–300
–300
–5
–50
–100
600
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCB=–200V, IE=0
VEB=–4V, IC=0
VCE=–6V,
VCE=–6V,
IC=–0.1mA
IC=–1mA
100
100
70
MHz
Conditions
Ratings
min
typ
max
–0.1
–0.1
320
Unit
µA
µA
VCE=–30V, IC=–10mA
* : The 2SA1689 is classified by 0.1mA h
FE
as follows :
Rank
hFE
E
100 to 200
F
160 to 320
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1003TN (KT)/O269MO, TS No.3233-1/3
2SA1689
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Output Capacitance
Reverse Transfer Capacitance
DC Current Gain Ratio
Symbol
VCE(sat)
VBE(sat)
Conditions
IC=–10mA, IB=–1mA
–300
–300
–5
2.4
1.5
1.0
Ratings
min
typ
max
–1.0
–1.0
Unit
V
V
V
V
V
pF
pF
IC=–10mA, IB=–1mA
V(BR)CBO IC=–10µA, IE=0
V(BR)CEO IC=–1mA, RBE=∞
V(BR)EBO
Cob
Cre
hFE ratio
IE=–10µA, IC=0
VCB=–30V, f=1MHz
VCB=–30V, f=1MHz
hFE1/hFE2
--50
IC -- VBE
VCE=--6V
5
3
hFE -- IC
VCE=--6V
Ta=75°C
25°C
--25°C
Collector Current, IC – mA
--40
2
DC Current Gain, hFE
100
7
5
3
2
--30
5
°
C
25
°
C
--20
--10
10
7
0
--0.4
5
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
5
--0.1
2
3
5
--1.0
2
3
5
--10
2
3
--100
ITR04155
5
--25
°
C
Ta=
7
Base-to-Emitter Voltage, VBE – V
2
ITR04154
2
Collector Current, IC – mA
f T -- IC
VCE=--30V
Cob -- VCB
f=1MHz
Gain-Bandwidth Product, fT – MHz
Output Capacitance, Cob – pF
7
2
3
5
7
2
3
5
7
100
7
5
10
7
5
3
2
3
2
1.0
7
5
10
7
--1.0
--10
7 --1.0
2
3
5
7 --10
2
3
5
Collector Current, IC – mA
2
ITR04156
3
2
Collector-to-Base Voltage, VCB -- V
7 --100
2
ITR04157
Cre -- VCB
f=1MHz
Collector-to-Emitter
Saturation Voltage, VCE (sat) –V
VCE(sat) -- IC
IC / IB=10
Reverse Transfer Capacitance, Cre -- pF
10
7
5
--1.0
7
5
3
2
3
2
25
°
C
Ta=75
°
C
1.0
7
5
7 --1.0
2
3
5
7 --10
2
3
5
7 --100
2
V
ITR04158
--0.1
7
5
5
7
--1.0
2
--25
°
C
3
5
7
--10
2
3
5
Collector-to-Base Voltage, VCB --
Collector Current, IC – mA
ITR04159
No.3233-2/3
2SA1689
3
2
VBE(sat) -- IC
IC / IB=10
3
2
--100
ASO
ICP=–100mA
s
0
µ
10
Base-to-Emitter
Saturation Voltage, VBE (sat) –V
Collector Current, IC – mA
5
3
2
--10
5
3
2
--1.0
IC=–50mA
10
--1.0
1m
m
Ta=--25°C
7
5
s
s
DC
75
°C
25°C
op
era
tio
n
3
2
--0.1
5
7 --1.0
2
3
5
7 --10
2
3
5
5
Ta=25°C
Single pulse
5
7
--10
2
3
5
7 --100
2
3
5
Collector Current, IC – mA
700
7 --100
ITR04160
PC -- Ta
Collector-to-Emitter Voltage, VCE – V
ITR04161
600
Collector Dissipation, P
C
–mW
500
400
300
200
100
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR04162
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2003. Specifications and information herein are subject
to change without notice.
PS No.3233-3/3
京公网安备 11010802033920号
EEWORLD
