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2N2817

Description
Power Bipolar Transistor, 20A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size62KB,1 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
Download Datasheet Parametric View All

2N2817 Overview

Power Bipolar Transistor, 20A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin,

2N2817 Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)20 A
Collector-emitter maximum voltage150 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-63
JESD-30 codeO-MUPM-D3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Maximum power consumption environment200 W
Maximum power dissipation(Abs)200 W
Certification statusNot Qualified
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Transistor component materialsSILICON
VCEsat-Max1.5 V
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer
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