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2N6592N

Description
Power Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-202-2, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size40KB,1 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

2N6592N Overview

Power Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-202-2, 3 PIN

2N6592N Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeSFM
package instructionTO-202-2, 3 PIN
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)35 MHz
Base Number Matches1
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