ASAT20 datasheet, PDF - EEWORLD Datasheet

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ASAT20: DescriptionRF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.250 INCH, FM-2; CategoryDiscrete semiconductor The transistor; File Size105KB，2 Pages; ManufacturerAdvanced Semiconductor, Inc.

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ASAT20 Overview

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.250 INCH, FM-2

ASAT20 Parametric

Parameter Name	Attribute value
Maker	Advanced Semiconductor, Inc.
package instruction	FLANGE MOUNT, R-CDFM-F2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	3.2 A
Collector-based maximum capacity	20 pF
Collector-emitter maximum voltage	28 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
highest frequency band	L BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	37.2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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ASAT20

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

ASI ASAT20

is Designed for

Genral Purpose Class C Operation up

to 1.7 GHz.

PACKAGE STYLE .250 2L FLG(A)

.020 x 45°

A

Ø .130 NOM.

.050 x 45°

FEATURES:

•

Internal Input Matching Network

•

P

G

= 8.0 dB at 20 W/1.7 GHz

•

Omnigold™

Metalization System /

Nitride Passivation

•

Common Base Class C

DIM

D C

L

B

M

F

E

G

H

I

J

K

MINIMUM

inches / mm

MAXIMUM

inches / mm

MAXIMUM RATINGS

I

C

V

CBO

V

CEO

V

EBO

P

DISS

T

J

T

STG

θ

JC

3.2 A

50 V

28 V

3.5 V

40 W @ T

C

= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

4.0 °C/W

A

B

C

D

E

F

G

H

I

J

K

L

M

.055 / 1.40

.124 / 3.15

.243 / 6.17

.635 / 16.13

.555 / 14.10

.739 / 18.77

.315 / 8.00

.002 / 0.05

.055 / 1.40

.075 / 1.91

.065 / 1.65

.253 / 6.43

.665 / 16.89

.565 / 14.35

.749 / 19.02

.325 / 8.26

.006 / 0.15

.065 / 1.65

.095 / 2.41

.190 / 4.83

.245 / 6.22

.092 / 2.34

.255 / 6.48

ORDER CODE: ASI10519

CHARACTERISTICS

SYMBOL

BV

CBO

BV

CEO

BV

EBO

h

FE

C

OB

P

G

η

C

T

C

= 25 °C

NONETEST

CONDITIONS

I

C

= 5.0 mA

I

C

= 5.0 mA

I

E

= 5.0 mA

V

CE

= 5.0 V

V

CB

= 28 V

V

CE

= 28 V

I

C

= 3.2 A

P

OUT

= 20 W

I

C

= 800 mA

f = 1.0 MHz

f = 1.40 GHz

MINIMUM TYPICAL MAXIMUM

45

12

3.0

10

24

7.6

8.0

8.2

50

100

UNITS

V

---

pF

dB

%

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. C

1/3

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