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2SA1732-Q

Description
Small Signal Bipolar Transistor, 8A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size38KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SA1732-Q Overview

Small Signal Bipolar Transistor, 8A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN

2SA1732-Q Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Maximum power dissipation(Abs)15 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Maximum off time (toff)300 ns
Maximum opening time (tons)100 ns
Base Number Matches1
Ordering number:ENN3136
PNP Epitaxial Planar Silicon Transistor
2SA1732
High-Speed Switching Applications
Features
· Adoption of FBET processes.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
Package Dimensions
unit:mm
2045B
[2SA1732]
6.5
5.0
4
1.5
2.3
0.5
0.85
0.7
5.5
7.0
0.8
1.6
1.2
0.6
1
2
3
7.5
0.5
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SA1732]
6.5
5.0
4
2.3
1.5
0.5
5.5
7.0
0.85
1
0.6
0.8
2
3
2.5
0.5
1.2
0 to 0.2
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40804TN (PC)/83098HA (KT)/6299MO, TS No.3136–1/4
1.2

2SA1732-Q Related Products

2SA1732-Q 2SA1732-QTL 2SA1732-RTL 2SA1732-R 2SA1732-S 2SA1732-STL 2SA1732-TL
Description Small Signal Bipolar Transistor, 8A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN Small Signal Bipolar Transistor, 8A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 3 PIN Small Signal Bipolar Transistor, 8A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN Small Signal Bipolar Transistor, 8A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 3 PIN Small Signal Bipolar Transistor, 8A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN Small Signal Bipolar Transistor, 8A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 3 PIN Small Signal Bipolar Transistor, 8A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 3 PIN
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 3 3 3 3 3
Reach Compliance Code unknow unknown unknow unknown unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 8 A 8 A 8 A 8 A 8 A 8 A 8 A
Collector-emitter maximum voltage 40 V 40 V 40 V 40 V 40 V 40 V 40 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 25 25 25 25 25 25 25
JESD-30 code R-PSIP-T3 R-PSSO-G2 R-PSIP-T3 R-PSSO-G2 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2
Number of components 1 1 1 1 1 1 1
Number of terminals 3 2 3 2 3 2 2
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE IN-LINE SMALL OUTLINE IN-LINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO YES NO YES NO YES YES
Terminal form THROUGH-HOLE GULL WING THROUGH-HOLE GULL WING THROUGH-HOLE GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
Maximum off time (toff) 300 ns 300 ns 300 ns 300 ns 300 ns 300 ns 300 ns
Maximum opening time (tons) 100 ns 100 ns 100 ns 100 ns 100 ns 100 ns 100 ns
Objectid - 2017632490 - 2017632493 2017632495 2017632494 -
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