Ordering number:ENN3136
PNP Epitaxial Planar Silicon Transistor
2SA1732
High-Speed Switching Applications
Features
· Adoption of FBET processes.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
Package Dimensions
unit:mm
2045B
[2SA1732]
6.5
5.0
4
1.5
2.3
0.5
0.85
0.7
5.5
7.0
0.8
1.6
1.2
0.6
1
2
3
7.5
0.5
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SA1732]
6.5
5.0
4
2.3
1.5
0.5
5.5
7.0
0.85
1
0.6
0.8
2
3
2.5
0.5
1.2
0 to 0.2
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40804TN (PC)/83098HA (KT)/6299MO, TS No.3136–1/4
1.2
2SA1732
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
–50
–40
–5
–8
–12
1
Unit
V
V
V
A
A
W
W
Tc=25˚C
15
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturatin Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Turn-OFF Time
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
VCB=–40V, IE=0
VEB=–3V, IC=0
VCE=–2V, IC=–500mA
VCE=–2V, IC=–8A
VCE=–2V, IC=–500mA
VCB=–10V, f=1MHz
IC=–4A, IB=–200mA
IC=–4A, IB=–200mA
–50
–40
–5
50
120
150
100
220
300
70*
25
250
100
–0.3
–0.95
–0.8
–1.3
MHz
pF
V
V
V
V
V
ns
ns
ns
Conditions
Ratings
min
typ
max
–1
–1
280*
Unit
µA
µA
V(BR)CBO IC=–100µA, IE=0
V(BR)CEO IC=–1mA, RBE=∞
V(BR)EBO
ton
tstg
toff
IE=–100µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
* : The 2SA1732 is classified by 500mA h
FE
as follows :
Rank
hFE
Q
70 to 140
R
100 to 200
S
140 to 280
Switching Time Test Circuit
IB2
INPUT
IB1
RB
VR
+
100µF
VBE=1V
20IB1= --20IB2= IC=--4A
OUTPUT
RL
+
470µF
VCC=--25V
PW=20µs
D.C.≤1%
No.3136–2/4
2SA1732
--5
IC -- VCE
A
mA
0m
--35
--4
--30m
A
A
--25m
--9
--8
IC -- VBE
VCE=--2V
--4
Collector Current, IC – A
--20mA
--3
Collector Current, IC – A
--7
--6
--5
--4
--3
--2
--1
--2
--10mA
--5mA
--1
0
0
--1
--2
--3
IB=0
--4
--5
ITR04435
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
ITR04436
Collector-to-Emitter Voltage, VCE – V
5
3
2
hFE -- IC
Base-to-Emitter Voltage, VBE – V
5
f T -- IC
VCE=--2V
Ta=75
°
C
Ta=
75
°
C
25
°
C
--25
°
C
VCE=--2V
7
2
3
5
7
2
3
--15mA
Gain-Bandwidth Product, fT –MHz
5 7 --1.0
2
3
5 7 --10
ITR04437
3
2
DC Current Gain, hFE
25
°
C
--25
°
C
100
7
5
3
2
100
7
5
3
2
10
--0.01
2
3
5 7 --0.1
2
3
--0.1
--1.0
5
Collector Current, IC – A
5
Cob -- VCB
Collector Current, IC – A
2
ITR04438
VCE(sat) -- IC
f=1MHz
IC / IB=20
Output Capacitance, Cob -- pF
3
2
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
--1000
7
5
3
2
100
7
5
--100
7
5
Ta=--25
°C
75
°
C
25
°
C
3
2
7
3
--1.0
2
3
5
7
--10
2
3
5
2
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
7 --10
ITR04440
5
Collector-to-Base Voltage, VCB -- V
--10
7
ITR04439
5
VBE(sat) -- IC
Collector Current, IC – A
SW Time -- IC
IC / IB=20
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
3
2
Switching Time, SW Time -- ns
3
2
VCC=--25V
IC=20IB1=--20IB2
tstg
100
7
5
to
n
--1.0
7
5
3
2
--0.01
Ta=--25
°
C
75
°
C
25
°
C
tf
3
2
10
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC – A
5 7 --10
ITR04441
3
5
7
--1.0
2
3
5
Collector Current, IC – A
--10
ITR04442
7
No.3136–3/4
2SA1732
2
--10
5
ASO
ICP=–12A
16
15
PC -- Ta
Collector Dissipation, P
C
– W
IC=–8A
DC
10
10
0m
ms
s
1m
s
14
12
10
8
6
4
2
Collector Current, IC – A
2
--1.0
5
2
--0.1
5
op
era
tio
n(
Ta
=2
5
°
DC
C)
ope
io
rat
c=
n(T
C)
25
°
2
--0.1
Ta=25°C
Single pulse
2
3
5 7 --1.0
2
3
5 7 --10
2
3
No heat sink
0
5 7 --100
ITR04443
0
20
40
60
80
100
120
140 150 160
ITR04444
Collector-to-Emitter Voltage, VCE – V
Ambient Temperature, Ta – ˚C
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2004. Specifications and information herein are subject to
change without notice.
PS No.3136–4/4
Microcontroller MCU
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