2SA1732R(TP) datasheet, PDF - EEWORLD Datasheet

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2SA1732R(TP): DescriptionTRANSISTOR,BJT,PNP,40V V(BR)CEO,8A I(C),TO-251VAR; CategoryDiscrete semiconductor The transistor; File Size38KB，4 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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2SA1732R(TP) Overview

TRANSISTOR,BJT,PNP,40V V(BR)CEO,8A I(C),TO-251VAR

2SA1732R(TP) Parametric

Parameter Name	Attribute value
Reach Compliance Code	compli
Maximum collector current (IC)	8 A
Configuration	Single
Minimum DC current gain (hFE)	100
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	15 W
surface mount	NO
Base Number Matches	1

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Ordering number:ENN3136

PNP Epitaxial Planar Silicon Transistor

2SA1732

High-Speed Switching Applications

Features

· Adoption of FBET processes.

· Large current capacity.

· Low collector-to-emitter saturation voltage.

· High-speed switching.

Package Dimensions

unit:mm

2045B

[2SA1732]

6.5

5.0

1.5

2.3

0.5

0.85

0.7

5.5

7.0

0.8

1.6

1.2

0.6

7.5

0.5

2.3

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP

unit:mm

2044B

[2SA1732]

6.5

5.0

2.3

1.5

0.5

5.5

7.0

0.85

0.6

0.8

2.5

0.5

1.2

0 to 0.2

2.3

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

40804TN (PC)/83098HA (KT)/6299MO, TS No.3136–1/4

1.2

2SA1732

--10

ASO

ICP=–12A

PC -- Ta

Collector Dissipation, P

– W

IC=–8A

Collector Current, IC – A

--1.0

--0.1

era

tio

ope

rat

n(T

--0.1

Ta=25°C

Single pulse

5 7 --1.0

5 7 --10

No heat sink

5 7 --100

ITR04443

100

120

140 150 160

ITR04444

Collector-to-Emitter Voltage, VCE – V

Ambient Temperature, Ta – ˚C

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be expor ted without obtaining the expor t license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of April, 2004. Specifications and information herein are subject to

change without notice.

PS No.3136–4/4

2SA1732R(TP) Related Products

	2SA1732R(TP)	2SA1732Q(TP)	2SA1732S(TP)	2SA1732S(TP-FA)
Description	TRANSISTOR,BJT,PNP,40V V(BR)CEO,8A I(C),TO-251VAR	TRANSISTOR,BJT,PNP,40V V(BR)CEO,8A I(C),TO-251VAR	TRANSISTOR,BJT,PNP,40V V(BR)CEO,8A I(C),TO-251VAR	TRANSISTOR,BJT,PNP,40V V(BR)CEO,8A I(C),TO-252VAR
Reach Compliance Code	compli	compli	compli	compli
Maximum collector current (IC)	8 A	8 A	8 A	8 A
Configuration	Single	Single	Single	Single
Minimum DC current gain (hFE)	100	70	140	140
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	15 W	15 W	15 W	15 W
surface mount	NO	NO	NO	YES
Base Number Matches	1	1	1	1

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