,
U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon PNP Power Transistor
2SA1146
Ja>£,
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V
(B
R,CEO=- 140V(Min)
• Complement to Type 2SC2706
i
3
PIN: l.Base
;
i
1
2
|
,
3
i.Ccllectcr
3. Emitter
TC-3PI
B
ackage
APPLICATIONS
• Audio frequency low power amplifier applications
• Recommend for 70W audio frequency amplifier output
stage applications
-
B
• -
»•
.t
-*- C -*-
s *• •*-
c
£
i "
A
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ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
4H
j
1
i
-*. --L
K
VCBO
Collector-Base Voltage
-140
V
»
VCEO
Collector-Emitter Voltage
-140
V
*-^j
—N
-»•
~^R-»~
-^-^-D
mm
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-10
A
MIN
DIM
19.60
A
B
15.30
C
4.00
0.90
D
F
H
J
K
L
N
3.20
2.90
0.50
19,90
1,20
10.80
4.40
3,30
1,40
IB
Base Current-Continuous
-1
A
PC
Collector Power Dissipation
@ T
C
=25'C
100
W
Tj
Junction Temperature
150
•c
'C
Q
R
S
T
U
Z
Tstg
Storage Temperature Range
-55-150
1.00
2.10
7.90
MAX
20,10
15,70
4,60
1,10
3,40
3.10
0,70
21,30
220
11,00
4,60
3.35
1.60
1.20
2.30
9.10
NJ Soini-Coniluctors reserves the right to change test conditions, parameter limits and package dimensions \vithout
notice. Information furnished by NJ Senii-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are currcnl before placina orders.
Quality Semi-Conductors
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1146
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
\c=
-50mA ; !B= 0
-140
V
VcE(sat)
Collector-Emitter Saturation Voltage
l
c
= -5A; I
B
= -0.5A
-2.0
V
VBE(OP)
Base-Emitter On Voltage
lc= -5A ; V
CE
= -5V
-2.5
V
ICBO
Collector Cutoff Current
V
CB
= -140V ; I
E
=0
-50
u A
IEBO
Emitter Cutoff Current
VEB= -5V; l
c
=0
-50
u A
hpE-1
DC Current Gain
lc=-1A;V
C
E=-5V
55
240
hFE-2
DC Current Gain
l
c
= -5A ; V
CE
= -5V
30
COB
Output Capacitance
|
E
=0; V
CB
= -10V; f
test
= 1.0MHz
220
PF
fi
Current-Gain— Bandwidth Product
lc=-1A;V
C
E=-10V
70
MHz
hpE-1 Classifications
R
O
Y
55-110
80-160
120-240
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