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2SA1416T-TD-E

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size452KB,7 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SA1416T-TD-E Overview

Small Signal Bipolar Transistor

2SA1416T-TD-E Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-243AA
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
Base Number Matches1
Ordering number : EN2005C
2SA1416 / 2SC3646
SANYO Semiconductors
DATA SHEET
2SA1416/2SC3646
Features
PNP / NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching
Applications
Adoption of FBET, MBIT processes
High breakdown voltage and large current capacity
Fast switching speed
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
( ) : 2SA1416
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
When mounted on ceramic substrate (250mm
×0.8mm)
2
Specifications
Parameter
Collector-to-Base Voltage
Absolute Maximum Ratings
at Ta=25°C
Conditions
Ratings
(--)120
(-
-)100
(--)6
(--)1
(-
-)2
500
1.3
150
--55 to +150
Unit
V
V
V
A
A
mW
W
°C
°C
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
1.5
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
2SA1416S-TD-E
2SA1416T-TD-E
2SC3646S-TD-E
2SC3646T-TD-E
Packing Type: TD
2.5
1.0
4.0
TD
1
0.4
0.5
1.5
3.0
2
3
0.4
Marking
LOT No.
RANK
CB
2SC3646
2
1
3
2SC3646
AB
RANK
0.75
2SA1416
Electrical Connection
2
1 : Base
2 : Collector
3 : Emitter
Bottom View
1
SANYO : PCP
3
2SA1416
http://www.sanyosemi.com/en/network/
82212 TKIM/31010EA TKIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2005-1/7
LOT No.

2SA1416T-TD-E Related Products

2SA1416T-TD-E 2SA1416S-TD-E 2SC3646S-TD-E 2SC3646T-TD-E
Description Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code unknow unknow unknow unknow
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 100 V 100 V 100 V 100 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 200 140 140 200
JEDEC-95 code TO-243AA TO-243AA TO-243AA TO-243AA
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP NPN NPN
surface mount YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz 120 MHz 120 MHz
Base Number Matches 1 1 1 1
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