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2SA1160A

Description
TRANSISTOR 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size140KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SA1160A Overview

TRANSISTOR 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN, BIP General Purpose Small Signal

2SA1160A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
Minimum DC current gain (hFE)140
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)0.9 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)140 MHz
Base Number Matches1
2SA1160
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1160
Strobe Flash Applications
Medium Power Amplifier Applications
High DC current gain and excellent h
FE
linearity
: h
FE (1)
= 140 to 600 (V
CE
=
−1
V, I
C
=
−0.5
A)
: h
FE (2)
= 60 (min), 120 (typ.) (V
CE
=
−1
V, I
C
=
−4
A)
Low saturation voltage
: V
CE (sat)
=
−0.5
V (max) (I
C
=
−2
A, I
B
=
−50
mA)
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulsed (Note 1)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
−20
−10
−6
−2
−4
−2
900
150
−55
to 150
Unit
V
V
V
A
A
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-92MOD
2-5J1A
Weight: 0.36 g (typ.)
Note 1: Pulse width
=
10 ms (max), duty cycle
=
30% (max)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
(BR) CEO
V
(BR) EBO
Test Condition
V
CB
= −20
V, I
E
=
0
V
EB
= −6
V, I
C
=
0
I
C
= −10
mA, I
B
=
0
I
E
= −1
mA, I
C
=
0
Min
−10
−6
140
60
Typ.
120
−0.20
−0.83
140
50
Max
−100
−100
600
−0.50
−1.5
V
V
MHz
pF
Unit
nA
nA
V
V
h
FE (1)
V
CE
= −1
V, I
C
= −0.5
A
(Note 2)
h
FE (2)
V
CE (sat)
V
BE
f
T
C
ob
V
CE
= −1
V, I
C
= −4
A
I
C
= −2
A, I
B
= −50
mA
V
CE
= −1
V, I
C
= −2
A
V
CE
= −1
V, I
C
= −0.5
A
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Note 2: h
FE (1)
Classification
A: 140 to 280, B: 200 to 400, C: 300 to 600
1
2004-07-07

2SA1160A Related Products

2SA1160A 2SA1160B 2SA1160C
Description TRANSISTOR 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN, BIP General Purpose Small Signal
Is it Rohs certified? incompatible incompatible incompatible
Parts packaging code TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 2 A 2 A 2 A
Collector-emitter maximum voltage 10 V 10 V 10 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 140 200 300
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 0.9 W 0.9 W 0.9 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 140 MHz 140 MHz 140 MHz
Base Number Matches 1 1 1
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