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2SB857B

Description
4A, 50V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size41KB,6 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SB857B Overview

4A, 50V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN

2SB857B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-220AB
package instructionTO-220AB, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)4 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)15 MHz
Base Number Matches1
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003

2SB857B Related Products

2SB857B 2SB857C 2SB857D 2SB858B 2SB858D 2SB858C
Description 4A, 50V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN 4A, 50V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN 4A, 50V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN 4A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN 4A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN 4A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Parts packaging code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
package instruction TO-220AB, 3 PIN TO-220AB, 3 PIN TO-220AB, 3 PIN TO-220AB, 3 PIN TO-220AB, 3 PIN TO-220AB, 3 PIN
Contacts 3 3 3 3 3 3
Reach Compliance Code unknow unknow unknow unknown compliant unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 4 A 4 A 4 A 4 A 4 A 4 A
Collector-emitter maximum voltage 50 V 50 V 50 V 60 V 60 V 60 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 60 100 160 60 160 100
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 40 W 40 W 40 W 40 W 40 W 40 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 15 MHz 15 MHz 15 MHz 15 MHz 15 MHz 15 MHz
Base Number Matches 1 1 1 1 1 1
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