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2SA812M4-TP

Description
100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size387KB,4 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric View All

2SA812M4-TP Overview

100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3

2SA812M4-TP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)90
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)180 MHz
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2SA812-M4
2SA812-M5
2SA812-M6
2SA812-M7
PNP
Silicon
Epitaxial Transistors
SOT-23
A
D
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
High DC Current Gain:90 h
FE
600.(V
CE
=-6.0V, I
C
=-1mA)
High voltage: V
CEO
=-50V
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Halogen
free available upon request by adding suffix "-HF"
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
-50
-60
-5.0
-100
200
-55 to +150
-55 to +150
Unit
V
V
V
mA
mW
Maximum Ratings
C
C
B
B
F
E
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector Cutoff Current
(V
CB
=-60Vdc,I
E
=0)
Emitter Cutoff Current
(V
EB
=-5.0Vdc, I
C
=0)
DC Current Gain*
(I
C
=-1.0mAdc, V
CE
=-6.0Vdc)
Collector Saturation Voltage*
(I
C
=-100mAdc, I
B
=-10mAdc)
Base Emitter Voltage*
(V
CE
=-6.0Vdc, I
C
=-1.0mAdc)
Gain Bandwidth product
(V
CE
=-6.0Vdc, I
E
=-10mAdc)
Min
---
---
Typ
---
---
Max
-0.1
-0.1
Units
uAdc
uAdc
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
G
H
J
OFF CHARACTERISTICS
I
CBO
I
EBO
K
DIMENSIONS
MM
MAX
.120
.104
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
ON CHARACTERISTICS
h
F
V
CE(sat)
V
BE
f
T
90
---
---
180
---
---
---
---
600
-0.3
-0.68
---
---
Vdc
Vdc
MHz
CLASSIFICATION OF h
FE
Marking
Range
M4
90-180
M5
135-270
M6
200-400
M7
300-600
.035
.900
Suggested Solder
Pad Layout
.031
.800
.079
2.000
inches
mm
.037
.950
.037
.950
Revision:
C
www.mccsemi.com
1
of
4
2013/10/11
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