Transys
Electronics
L I M I T E D
SOT-23-3L Plastic-Encapsulated Transistors
2SA812
FEATURES
Power dissipation
P
CM
:
0.2
W (Tamb=25℃)
TRANSISTOR (PNP)
SOT-23-3L
1.
BASE
2.
EMITTER
3.
COLLECTOR
1. 02
0.
0. 95¡ À 025
2. 80¡ À 05
0.
1. 60¡ À0. 05
Collector current
A
I
CM
: -0.1
Collector-base voltage
V
V
(BR)CBO
: -60
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
unless otherwise specified)
Test
conditions
MIN
-60
-50
-5
-0.1
-0.1
90
600
-0.3
-0.68
180
V
V
MHz
TYP
MAX
UNIT
V
V
V
Ic=-100
µ
A, I
E
=0
Ic= -1mA, I
B
=0
I
E
= -100
µ
A, I
C
=0
V
CB
=- 60 V , I
E
=0
V
EB
= -5V ,
I
C
=0
0. 35
2. 92¡ À0. 05
1. 9
µ
A
µ
A
V
CE
=- 6V, I
C
= -1mA
I
C
=-100 mA, I
B
= -10mA
I
C
=-1mA, V
CE
=-6V
V
CE
=-6V, I
C
= -10mA
f
T
CLASSIFICATION OF h
FE
Marking
Range
M4
90-180
M5
135-270
M6
200-400
M7
300-600
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