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2SA812M4-T1B-AT

Description
TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346
CategoryDiscrete semiconductor    The transistor   
File Size327KB,6 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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2SA812M4-T1B-AT Overview

TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346

2SA812M4-T1B-AT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompli
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)90
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
surface mountYES
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

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