Transistor
2SB1599
Silicon PNP epitaxial planer type
For power amplification
Complementary to 2SD2457
Unit: mm
s
Features
q
q
4.5±0.1
1.6±0.2
1.5±0.1
Low collector to emitter saturation voltage V
CE(sat)
.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
2.6±0.1
0.4max.
45°
1.0
–0.2
+0.1
0.4±0.08
4.0
–0.20
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
*
0.5±0.08
1.5±0.1
0.4±0.04
(Ta=25˚C)
Ratings
–50
–40
–5
–3
– 0.6
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
3
3.0±0.15
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
B
P
C*
T
j
T
stg
marking
EIAJ:SC–62
Mini Power Type Package
Marking symbol :
1X
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
I
CEO
I
EBO
V
CBO
V
CEO
h
FE*
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
V
CE
= –12V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –1mA, I
E
= 0
I
C
= –10mA, I
B
= 0
V
CE
= –5V, I
C
= –1A
I
C
= –1.5A, I
B
= –0.15A
I
C
= –2A, I
B
= –0.2A
V
CB
= –5V, I
E
= 0.5A, f = 200MHz
V
CB
= –5V, I
E
= 0, f = 1MHz
150
70
–50
–40
50
– 0.4
220
–1
–1.5
V
V
MHz
pF
min
typ
max
–1
–100
–100
Unit
µA
µA
µA
V
V
*
h
FE
Rank classification
P
50 ~ 100
Q
80 ~ 160
R
100 ~ 220
h
FE
Rank
2.5±0.1
+0.25
1
Transistor
P
C
— Ta
1.4
2SB1599
I
C
— V
CE
T
C
=25˚C
I
B
=–40mA
–35mA
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
–10
Collector power dissipation P
C
(W)
1.2
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
–4.0
–3.5
Collector current I
C
(A)
1.0
–3.0
–2.5
–2.0
–1.5
–1.0
–30mA
–25mA
–20mA
–15mA
–10mA
–5mA
–3
0.8
–1
0.6
– 0.3
Ta=100˚C
25˚C
–25˚C
0.4
– 0.1
0.2
– 0.5
0
0
20
40
60
80 100 120 140 160
0
–2
–4
–6
–8
–10
– 0.03
0
– 0.01
– 0.01 – 0.03
– 0.1
– 0.3
–1
–3
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=10
–10
1000
h
FE
— I
C
240
V
CE
=–5V
f
T
— I
E
V
CB
=–5V
f=50MHz
Ta=25˚C
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
–3
200
–3
25˚C
–1
Ta=–25˚C
100˚C
300
T
C
=100˚C
25˚C
160
100
–25˚C
120
– 0.3
30
– 0.1
10
80
– 0.03
3
40
– 0.01
– 0.01 – 0.03
– 0.1
– 0.3
–1
–3
1
– 0.01 – 0.03
– 0.1
– 0.3
–1
0
0.01 0.03
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(A)
C
ob
— V
CB
150
–80
V
CER
— R
BE
Collector to emitter voltage V
CER
(V)
I
E
=0
f=1MHz
Ta=25˚C
Ta=25˚C
1000
I
CEO
— Ta
V
CE
=–12V
Collector output capacitance C
ob
(pF)
–70
300
–60
120
I
CEO
(Ta)
I
CEO
(Ta=25˚C)
100
90
–50
–40
–30
2SA699
–20
–10
0
0.001
2SA699A
30
60
10
30
3
0
–1
1
0.01
0.1
1
10
0
20
40
60
80
100
120
–3
–10
–30
–100
Collector to base voltage V
CB
(V)
Base to emitter resistance R
BE
(kΩ)
Ambient temperature Ta (˚C)
2
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2001 MAR
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