DATA SHEET
SILICON TRANSISTOR
2SA812
PNP SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
•
Complementary to 2SC1623
•
High DC Current Gain: h
FE
= 200 TYP. (V
CE
=
−6.0
V, I
C
=
−1.0
mA)
•
High Voltage: V
CEO
=
−50
V
<R>
PACKAGE DRAWING (Unit: mm)
2.8 ± 0.2
0.4
+0.1
–0.05
1.5 TYP.
0.65
–0.15
+0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Total Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
−60
V
V
CEO
−50
V
V
EBO
−5.0
V
I
C
−100
mA
P
T
200
mW
T
j
150
°C
T
stg
−55
to +150
°C
2.9 ± 0.2
0.95
TYP.
0.95
TYP.
2
3
1
0.3
TYP.
Marking
1.1 to 1.4
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Saturation Voltage
Base to Emitter Voltage
Gain Bandwidth Product
SYMBOL
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
−0.58
90
200
−0.18
−0.62
180
4.5
MIN.
TYP.
MAX.
−0.1
−0.1
600
−0.3
−0.68
V
V
MHz
pF
UNIT
TEST CONDITIONS
V
CB
=
−60
V, I
E
= 0 A
V
EB
=
−5.0
V, I
C
= 0 A
V
CE
=
−6.0
V, I
C
=
−1.0
mA
I
C
=
−100
mA, I
B
=
−10
mA
V
CE
= 6.0 V, I
C
=
−1.0
mA
V
CE
=
−6.0
V, I
E
= 10 mA
V
CB
=
−10
V, I
E
= 0 A, f = 1.0 MHz
Note
μ
A
μ
A
<R>
Output Capacitance
Note
Pulsed: PW
≤
350
μ
s, Duty Cycle
≤
2%
h
FE
CLASSIFICATION
Marking
h
FE
M4
90 to 180
M5
135 to 270
M6
200 to 400
M7
300 to 600
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17119EJ4V0DS00 (4th edition)
Date Published November 2005 NS CP(K)
Printed in Japan
0 to 0.1
0.16
+0.1
–0.06
0.4
+0.1
–0.05
c
1984
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2SA812
•
The information in this document is current as of November, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
•
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•
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•
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purposes in semiconductor product operation and application examples. The incorporation of these
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•
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•
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