Ordering number:ENN3511A
2SA1785 : PNP Epitaxial Planar Silicon Transistor
2SC4645 : NPN Triple Diffused Planar Silicon Transistor
2SA1785/2SC4645
High Voltage Driver Applications
Features
· Large current capacity (I
C
=1A).
· High breakdown voltage (V
CEO
≥400V).
Package Dimensions
unit:mm
2064A
[2SA1785/2SC4645]
2.5
1.45
6.9
1.0
4.5
1.0
0.6
1.0
0.9
1
2
3
0.5
0.45
( ) : 2SA1785
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Colletor Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
2.54
2.54
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
Ratings
(–)400
(–)400
(–)5
(–)1
(–)2
1
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
VCB=(–)300V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)100mA
VCE=(–)10V, IC=(–)50mA
VCB=(–)30V, f=1MHz
IC=(–)200mA, IB=(–)20mA
IC=(–)200mA, IB=(–)20mA
40*
(50)70
(12)8
(–)1.0
(–)1.0
Conditions
Ratings
min
typ
max
(–)1.0
(–)1.0
200*
MHz
pF
V
V
Unit
µA
µA
* : The 2SA1785/2SC4465 are classified by 100mA h
FE
as follows :
Rank
hFE
C
40 to 80
D
60 to 120
E
100 to 200
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
93003TN (KT)/83198HA (KT)/12894TH AX-8287/5170TA (KOTO) 8-6910 No.3511–1/5
4.0
1.0
2SA1785/2SC4645
Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
ton
tstg
tf
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Conditions
Ratings
min
(–)400
(–)400
(–)5
(0.25)
0.11
(3.0)
4.0
(0.3)
0.65
typ
max
Unit
V
V
V
µs
µs
µs
µs
µs
µs
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
VR
50Ω
IB1
IB2
RB
+
470µF
VCE=150V
OUTPUT
RL
+
100µF
VBE=--5V
10IB1= --10IB2= IC=200mA
RL=750Ω, RB=50Ω, at IC=200mA
(For PNP, the polarity is reversed.)
--1.0
IC -- VBE
2SA1785
VCE=--10V
1.0
IC -- VBE
2SC4645
VCE=10V
--0.8
0.8
Collector Current, IC – A
--0.6
Collector Current, IC – A
0.6
25
°
C
--25
°
C
Ta=7
5
°
C
°
C
--0.4
Ta=7
5
0.4
--0.2
0.2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Base-to-Emitter Voltage, VBE – V
3
2
ITR04666
3
hFE -- IC
Base-to-Emitter Voltage, VBE – V
--25
°
C
25
°
C
ITR04667
hFE -- IC
Ta=75°C
100
2SA1785
VCE=--10V
2
Ta=75
°C
25°C
2SC4645
VCE=10V
DC Current Gain, hFE
7
5
3
2
DC Current Gain, hFE
25°C
--25
°C
100
7
5
3
2
--25°C
10
7
5
3
3
5 7 --10
2
3
5 7 --100
2
3
10
7
5
3
Collector Current, IC –
5 7--1000 2 3
ITR04668
mA
3
5
7 10
2
3
5
7 100
2
3
5
7 1000
2
Collector Current, IC – mA
ITR04669
No.3511–2/5
2SA1785/2SC4645
3
f T -- IC
Gain-Bandwidth Product, fT – MHz
Gain-Bandwidth Product, fT – MHz
2
2SA1785
VCE=--10V
3
2
f T -- IC
2SC4645
VCE=10V
100
7
5
3
2
100
7
5
3
2
10
7
5
3
5
7
--10
2
3
5
7 --100
2
3
5
10
7
5
3
5
7
10
2
3
5
7
100
2
3
5
Collector Current, IC – mA
3
2
ITR04670
100
7
Collector Current, IC – mA
ITR04671
Cob -- VCB
2SA1785
f=1MHz
Output Capacitance, Cob -- pF
Cob -- VCB
2SC4645
f=1MHz
Output Capacitance, Cob -- pF
5
100
7
5
3
2
3
2
10
7
5
10
7
5
3
7 --1.0
2
3
5
7 --10
2
3
5
3
Collector-to-Base Voltage, VCB --
3
2
7 --100
2
V
ITR04672
2
7 1.0
2
3
5
7
10
2
3
5
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
7 100
2
ITR04673
VCE(sat) -- IC
2SA1785
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
1.0
7
5
2SC4645
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
--1.0
7
5
3
2
3
2
--0.1
7
5
3
5
7 --10
Ta=--25
°C
75
°
C
25°C
2
3
5
7 --100
2
3
5 7 --1000
ITR04674
0.1
7
5
3
5
7
10
5
°
C
Ta=7
°
C
--25
25
°
C
2
3
5
7 100
2
3
5 7 1000
ITR04675
Collector Current, IC – mA
--10
7
VBE(sat) -- IC
Collector Current, IC – mA
10
7
VBE(sat) -- IC
2SA1785
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) –V
2SC4645
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) –V
5
5
3
2
3
2
--1.0
7
5
Ta=--25°C
1.0
7
5
3
Ta=--25°C
75
°C
25°C
75
°C
25°C
5
7 100
2
3
5 7 1000
ITR04677
3
3
5
7 --10
2
3
5
7 --100
2
3
5
7 --1000
2
3
5
7
10
2
3
Collector Current, IC – mA
ITR04676
Collector Current, IC – mA
No.3511–3/5
2SA1785/2SC4645
10
7
SW Time -- IC
Switching Time, SW Time --
µs
ts
tg
Switching Time, SW Time --
µs
5
3
2
2SA1785
VCC=--150V
10IB1=--10IB2=IC
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
SW Time -- IC
tst
g
2SC4645
VCC=150V
10IB1=--10IB2=IC
1.0
7
5
tf
tf
3
2
to
n
to
n
0.1
7
5
7 --10
2
3
5
7 --100
2
3
5
7 --1000
2
5 7
10
2
3
5
7 100
2
3
5
Collector Current, IC – mA
5
3
2
ITR04678
5
3
2
ASO
Collector Current, IC – mA
7 1000
2 3
ITR04679
ASO
ICP=–2000mA
IC=–1000mA
s
1m
s
s
10m
100m
D
C
op
2SA1785
ICP=2000mA
IC=1000mA
D
C
op
2SC4645
10
Collector Current, IC – mA
Collector Current, IC – mA
--1000
5
3
2
1000
5
3
2
100
5
3
2
10
5
m
s
s
1m
er
at
io
er
s
0m
10
--100
5
3
2
--10
5
n(
at
io
Ta
=
25
°
C
n(
Ta
=
25
)
°
C
)
3
2
--0.1
Tc=25°C
Single pulse
2 3
5
--1.0
2 3
5
--10
2 3
Collector-to-Emitter Voltage, VCE – V
1.2
5 --100 2 3 5 --1000
ITR04680
3
2
Single pulse
0.1 2 3 5 1.0
Tc=25°C
2 3
5
10
2 3
5
100
2 3
PC -- Ta
Collector-to-Emitter Voltage, VCE – V
5 1000
ITR04681
2SA1785 / 2SC4645
1.0
Collector Dissipation, P
C
– W
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR04682
No.3511–4/5
2SA1785/2SC4645
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2003. Specifications and information herein are
subject to change without notice.
PS No.3511–5/5
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