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2SA1785-E

Description
1000mA, 400V, PNP, Si, SMALL SIGNAL TRANSISTOR, NMP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size40KB,5 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SA1785-E Overview

1000mA, 400V, PNP, Si, SMALL SIGNAL TRANSISTOR, NMP, 3 PIN

2SA1785-E Parametric

Parameter NameAttribute value
Objectid1426751355
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
Maximum collector current (IC)1 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
VCEsat-Max1 V
Ordering number:ENN3511A
2SA1785 : PNP Epitaxial Planar Silicon Transistor
2SC4645 : NPN Triple Diffused Planar Silicon Transistor
2SA1785/2SC4645
High Voltage Driver Applications
Features
· Large current capacity (I
C
=1A).
· High breakdown voltage (V
CEO
≥400V).
Package Dimensions
unit:mm
2064A
[2SA1785/2SC4645]
2.5
1.45
6.9
1.0
4.5
1.0
0.6
1.0
0.9
1
2
3
0.5
0.45
( ) : 2SA1785
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Colletor Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
2.54
2.54
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
Ratings
(–)400
(–)400
(–)5
(–)1
(–)2
1
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
VCB=(–)300V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)100mA
VCE=(–)10V, IC=(–)50mA
VCB=(–)30V, f=1MHz
IC=(–)200mA, IB=(–)20mA
IC=(–)200mA, IB=(–)20mA
40*
(50)70
(12)8
(–)1.0
(–)1.0
Conditions
Ratings
min
typ
max
(–)1.0
(–)1.0
200*
MHz
pF
V
V
Unit
µA
µA
* : The 2SA1785/2SC4465 are classified by 100mA h
FE
as follows :
Rank
hFE
C
40 to 80
D
60 to 120
E
100 to 200
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
93003TN (KT)/83198HA (KT)/12894TH AX-8287/5170TA (KOTO) 8-6910 No.3511–1/5
4.0
1.0

2SA1785-E Related Products

2SA1785-E 2SA1785C 2SA1785-C 2SA1785D 2SA1785-D 2SA1785E 2SC4645-E 2SC4645-D 2SC4645-C 2SC4645D
Description 1000mA, 400V, PNP, Si, SMALL SIGNAL TRANSISTOR, NMP, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, NMP, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, NMP, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, NMP, 3 PIN 1000 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR, NMP, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, NMP, 3 PIN 1000mA, 400V, NPN, Si, SMALL SIGNAL TRANSISTOR, NMP, 3 PIN 1000 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, NMP, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, NMP, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, NMP, 3 PIN
Objectid 1426751355 1484020451 1484020451 1484020454 1426751361 1484020457 1426751347 1426751353 1484020508 1484020511
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3 3 3 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
Maximum collector current (IC) 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 400 V 400 V 400 V 400 V 400 V 400 V 400 V 400 V 400 V 400 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 40 40 60 60 100 100 60 40 60
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Polarity/channel type PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 50 MHz 50 MHz 50 MHz 50 MHz 50 MHz 50 MHz 70 MHz 70 MHz 70 MHz 70 MHz
ECCN code - EAR99 EAR99 EAR99 - EAR99 - - EAR99 EAR99
Maximum power dissipation(Abs) - 1 W 1 W 1 W - 1 W - - 1 W 1 W
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