2N6925 datasheet, PDF - EEWORLD Datasheet

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2N6925: DescriptionPower Bipolar Transistor, 35A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin; CategoryDiscrete semiconductor The transistor; File Size191KB，4 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Related ProductsFound1parts with similar functions to 2N6925

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2N6925 Overview

Power Bipolar Transistor, 35A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin

2N6925 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknow
Shell connection	COLLECTOR
Maximum collector current (IC)	35 A
Collector-based maximum capacity	800 pF
Collector-emitter maximum voltage	450 V
Configuration	SINGLE
Minimum DC current gain (hFE)	8
JEDEC-95 code	TO-204AE
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	300 W
Maximum power dissipation(Abs)	300 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	15 MHz
Maximum opening time (tons)	120 ns
VCEsat-Max	5 V
Base Number Matches	1

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2N6925 Related Products

	2N6925	2N6924A	2N6924	2N6925A
Description	Power Bipolar Transistor, 35A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin	Power Bipolar Transistor, 35A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin	Power Bipolar Transistor, 35A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin	Power Bipolar Transistor, 35A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
package instruction	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknow	unknow	unknow	unknow
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	35 A	35 A	35 A	35 A
Collector-based maximum capacity	800 pF	800 pF	800 pF	800 pF
Collector-emitter maximum voltage	450 V	400 V	400 V	450 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	8	8	8	8
JEDEC-95 code	TO-204AE	TO-204AE	TO-204AE	TO-204AE
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Maximum power consumption environment	300 W	300 W	300 W	300 W
Maximum power dissipation(Abs)	300 W	300 W	300 W	300 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	15 MHz	15 MHz	15 MHz	15 MHz
Maximum opening time (tons)	120 ns	120 ns	120 ns	120 ns
VCEsat-Max	5 V	5 V	5 V	5 V
Base Number Matches	1	1	1	1

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